driver circuit<br>• Built in bias resistor R1=47 R2=47<br>• BCR148S Two internally isolated
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BCR 148L3 E6327 (pdf) |
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BCR 148T E6327 |
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NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 R2=47 • BCR148S Two internally isolated transistors with good matching in one multichip package • BCR148S For orientation in reel see package information below • Pb-free RoHS compliant package • Qualified according AEC Q101 BCR148... BCR148 BCR148W R1 R2 2 E EHA07184 Type BCR148 BCR148S BCR148W BCR148S EHA07174 Marking Pin Configuration Package WEs 1=B 2=E 3=C - SOT23 WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 WEs 1=B 2=E 3=C - SOT323 2011-08-29 BCR148... Thermal Resistance Parameter Junction - soldering point1 BCR148 BCR148S BCR148W Tj Tstg Symbol RthJS Value 50 80 10 100 200 250 150 -65 150 Value 240 140 105 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance Calculation Unit V mA mW Unit K/W 2011-08-29 BCR148... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V BR CEO 50 Collector-base breakdown voltage IC = 10 µA, IE = 0 |
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