NPN Silicon AF Transistors<br>• For AF driver and output stages<br>• High collector current<br>• Low collector-emitter saturation voltage<br>• Complementary types BCP51...BCP53 PNP<br>• Pb-free RoHS compliant package<br>• Qualified according AEC Q101
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BCP54E6327HTSA1 (pdf) |
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PDF Datasheet Preview |
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NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types BCP51...BCP53 PNP • Pb-free RoHS compliant package • Qualified according AEC Q101 BCP54...-BCP56... Type BCP54-16 BCP55-16 BCP56-10 BCP56-16 Marking Pin Configuration 1=B 2=C 3=E 4=C - 1=B 2=C 3=E 4=C - 1=B 2=C 3=E 4=C - 1=B 2=C 3=E 4=C - 1=B 2=C 3=E 4=C - 1=B 2=C 3=E 4=C - * Marking is the same as the type-name Package SOT223 2011-10-13 BCP54...-BCP56... Maximum Ratings Parameter Collector-emitter voltage BCP54 BCP55 BCP56 Symbol VCEO Value 45 60 80 Collector-base voltage BCP54 BCP55 BCP56 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 120°C VEBO Ptot Junction temperature Storage temperature Tstg -65 150 Thermal Resistance Parameter Value Junction - soldering point1 RthJS 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance Calculation Unit V A mA W °C Unit K/W 2011-10-13 BCP54...-BCP56... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values |
More datasheets: ICS9P946AFLF | DDMY-43W2P-K87 | APTGF50DU120TG | BCP5416E6433HTMA1 | BCP 55-16 E6327 | BCP5616E6327HTSA1 | BCP 54-16 E6327 | BCP55E6327HTSA1 | BCP5610E6327HTSA1 | BCP 56-10 E6433 |
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