IDW12G65C5 650V SiC Schottky Diode Datasheet

650V SiC Schottky Diode
IDW12G65C5

ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ! Generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.

Features

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 27 mA2)
• Optimized for high temperature operation

Benefits

• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

Applications

• Switch mode power supply
• Power factor correction
• Solar inverter
• Uninterruptible power supply

IDW12G65C5FKSA1 Datasheet DIODE SCHOTTKY 650V 12A TO247-3

IDW12G65C5XKSA1 Datasheet DIODE SCHOTTKY 650V 12A TO247-3

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