SE1450-003
SE1450-003 Datasheet
SE1450
| Part | Datasheet |
|---|---|
SE1450-003 |
SE1450-003 (pdf) |
| Related Parts | Information |
|---|---|
SE1450-003L |
SE1450-003L |
SE1450-004 |
SE1450-004 |
SE1450-001 |
SE1450-001 |
SE1450-002L |
SE1450-002L |
SE1450-004L |
SE1450-004L |
SE1450-001L |
SE1450-001L |
SE1450-002 |
SE1450-002 |
| PDF Datasheet Preview |
|---|
| SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • nominal beam angle • 935 nm wavelength • Wide operating temperature range - to • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature SE1450-XXXL . Both leads are flexible and may be formed as required to fit various mounting configurations. INFRA-63.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals SE1450-XXX DIM_001a.ds4 SE1450-XXXL DIM_001b.ds4 CATHODE CASE ANODE DIA CATHODE ANODE TYPICAL MIN Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 50 mA Power Dissipation 75 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 10 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE1450 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement gra_001.ds4 |
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