SDP8405-015
SDP8405-015 Datasheet
SDP8405
| Part | Datasheet |
|---|---|
SDP8405-015 |
SDP8405-015 (pdf) |
| Related Parts | Information |
|---|---|
SDP8405-001 |
SDP8405-001 |
SDP8405-013 |
SDP8405-013 |
SDP8405-002 |
SDP8405-002 |
SDP8405-014 |
SDP8405-014 |
SDP8405-003 |
SDP8405-003 |
| PDF Datasheet Preview |
|---|
| SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. INFRA-22.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIA. COLLECTOR EMITTER MAX. MIN. SQ.LEADTYP DIA. DIM_100.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 70 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 5 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT cir_015.cdr SWITCHING WAVEFORM cir_004.cdr Fig. 1 Responsivity vs Angular Displacement |
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