HN29V51211T-50H 512M AND Type Flash Memory Datasheet
HN29V51211T-50H 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211T-50H are more than 32,113 (98% of all sector address) and less than 32,768 sectors.
Features
• On-board single power supply (VCC) VCC = 2.7V to 3.6V
• Organization - AND Flash Memory (2048 + 64) bytes x (More than 32,113 sectors) - Data register (2048 + 64) bytes
• Multi-level memory cell - 2 bit/per memory cell
• Automatic programming - Sector program time 1.0 ms (typ) - System bus free - Address, data latch function - Internal automatic program verify function - Status data polling function
HN29V51211T-50H
• Automatic erase - Single sector erase time 1.0 ms (typ) - System bus free - Internal automatic erase verify function - Status data polling function
• Erase mode - Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time - First access time 50 µs (max) - Serial access time 50 ns (max)
• Low power dissipation - ICC1 = 2 mA (typ) (Read) - ICC2 = 20 mA (max) (Read) - ISB2 = 50 µA (max) (Standby) - ICC3/ICC4 = 40 mA (max) (Erase/Program) - ISB3 = 20 µA (max) (Deep standby)
• The following architecture is required for data reliability. - Error correction more than 3-bit error correction per each sector read - Spare sectors 1.8% (579 sectors) (min) within usable sectors
Ordering Information
HN29V51211T-50H
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