MSRTA40060 A thru MSRTA400100 A
Part | Datasheet |
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MSRTA400100(A) (pdf) |
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MSRTA40060(A) |
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MSRTA40080(A) |
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Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 1600 V VRRM MSRTA40060 A thru MSRTA400100 A VRRM = 600 V - 1600 V IF = 400 A Heavy Three Tower Package ts.com Maximum ratings, at Tj = 25 °C, unless otherwise specified n Parameter Conditions MSRTA40060 A Continuous forward current p Surge non-repetitive forward current, Half Sine Wave m Operating temperature o Storage temperature VRRM VRMS VDC IF,SM Tj Tstg TC 125 °C TC = 25 °C, tp = ms 600 420 600 400 4150 -40 to 175 -40 to 175 MSRTA40080 A 800 560 800 400 4150 -40 to 175 -40 to 175 ec Electrical characteristics, at Tj = 25 °C, unless otherwise specified lin Parameter Diode forward voltage Symbol VF IR Conditions IF = 400 A, Tj = 25 °C VR = 600 V, Tj = 25 °C VR = 600 V, Tj = 150 °C MSRTA40060 A 25 10 MSRTA40080 A 25 10 Thermal characteristics Thermal resistance, junction case RthJC MSRTA400100 A 1000 700 1000 400 4150 -40 to 175 -40 to 175 MSRTA400100 A 25 10 Unit V A °C °C |
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