MBR200100CTS
MBR200100CTS Datasheet
MBR200100CTS
| Part | Datasheet |
|---|---|
MBR200100CTS |
MBR200100CTS (pdf) |
| PDF Datasheet Preview |
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| Silicon Power Schottky Diode • High Surge Capability Package MBR200100CTS VRRM IF = 100 V = 200 A Pin 1 Pin 3 SOT 227 Pin 2 Pin 4 Maximum Ratings at Tj = 125 °C, unless otherwise specified Storage temperature VRRM VRMS VDC IF Tj Tstg Conditions TC 85 °C Electrical Characteristics at Tj = 125 °C, unless otherwise specified Per Leg Symbol VF IR C Conditions IF = 100 A, Tj = 25 °C IF = 100 A, Tj = 125 °C VR = 80 V, Tj = 25 °C VR = 80 V, Tj = 125 °C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 50 V, f = 1 MHz, Tj = 25 °C VR = 100 V, f = 1 MHz, Tj = 25 °C Thermal Characteristics Thermal resistance, junction - case RthJC Values 100 70 100 200 -40 to 175 -40 to 175 min. Values typ. 1830 4960 854 617 max. 10 5000 Unit V A °C °C Unit V µA °C/W Figure 1 Typical Forward Characteristics Per Leg Mar 2012 Pg1 of 3 MBR200100CTS Package Dimensions: SOT-227 |
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