EPC2039

EPC2039 Datasheet

EPC2039 Enhancement Mode Power Transistor

Part	Datasheet
EPC2039	EPC2039 (pdf)

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FET DATASHEET EPC2039 Enhancement Mode Power Transistor VDSS , 80 V RDS on , 25 m ID , A EPC2039 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS on , while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings Drain-to-Source Voltage Continuous Drain-to-Source Voltage up to 10,000 5ms pulses at Continuous TA = Pulsed TPULSE = 300 µs Gate-to-Source Voltage VGS Gate-to-Source Voltage Operating Temperature TSTG Storage Temperature -4 -40 to 150 -40 to 150 EPC2039 FETs are supplied only in passivated die form with solder bumps Die Size mm x mm Applications • High Speed DC-DC conversion • Wireless Power Transfer • LiDAR/Pulsed Power Applications Benefits • Ultra High Efficiency • Ultra Low RDS on • Ultra low QG • Ultra small footprint Static Characteristics TJ= unless otherwise stated PARAMETER TEST CONDITIONS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 300 µA IDSS Drain Source Leakage Gate-to-Source Forward Leakage IGSS VDS = 64 V, VGS = 0 V VGS = 5 V VGS = -4 V VGS TH Gate Threshold Voltage VDS = VGS, ID = 2 mA RDS on VSD Drain-Source On Resistance Source-Drain Forward Voltage VGS = 5 V, ID = 6 A IS = A, VGS = 0 V All measurements were done with substrate shorted to source. Thermal Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Board

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FET DATASHEET

EPC2039 Enhancement Mode Power Transistor

VDSS , 80 V RDS on , 25 m ID , A

EPC2039

EFFICIENT POWER CONVERSION

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS on , while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Maximum Ratings

Drain-to-Source Voltage Continuous

Drain-to-Source Voltage up to 10,000 5ms pulses at

Continuous TA =

Pulsed TPULSE = 300 µs

Gate-to-Source Voltage VGS

Gate-to-Source Voltage

Operating Temperature

TSTG Storage Temperature
-4 -40 to 150
-40 to 150

EPC2039 FETs are supplied only in passivated die form with solder bumps Die Size mm x mm

Applications
• High Speed DC-DC conversion
• Wireless Power Transfer
• LiDAR/Pulsed Power Applications

Benefits
• Ultra High Efficiency
• Ultra Low RDS on
• Ultra low QG
• Ultra small footprint

Static Characteristics TJ= unless otherwise stated

PARAMETER

TEST CONDITIONS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 300 µA

IDSS

Drain Source Leakage

Gate-to-Source Forward Leakage

IGSS

VDS = 64 V, VGS = 0 V VGS = 5 V VGS = -4 V

VGS TH

Gate Threshold Voltage

VDS = VGS, ID = 2 mA

RDS on VSD

Drain-Source On Resistance Source-Drain Forward Voltage

VGS = 5 V, ID = 6 A IS = A, VGS = 0 V

All measurements were done with substrate shorted to source.

Thermal Characteristics

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

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Datasheet ID: EPC2039 510919