ZXMP3F36N8TA
ZXMP3F36N8TA Datasheet
ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET
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ZXMP3F36N8TA |
ZXMP3F36N8TA (pdf) |
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| DISCONTINUED ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET V BR DSS V -30 RDS on VGS=-10V VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance RDS on and yet maintain superior switching performance. Features • Low on-resistance • SO8 package Applications • Battery Protection • Battery disconnect • Power management functions Ordering information Device ZXMP3F36N8TA Reel size inches Tape width mm Quantity per reel Device marking ZXMP 3F36 Top view Issue 1 - August 2008 Diodes Incorporated 2008 DISCONTINUED ZXMP3F36N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage b Continuous Drain current VGS= -10V TA=25°C VGS= -10V TA=70°C b a VGS= -10V TA=25°C d VGS= -10V TL=25°C Pulsed Drain current c Continuous Source current Body diode b Pulsed Source current Body diode c Power dissipation at TA =25°C a Linear derating factor b Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C d Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD Tj, Tstg Limit -30 ±20 -55 to 150 Unit V A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient a b Junction to ambient d Junction to lead Value 80 45 Unit °C/W °C/W °C/W a For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. b Mounted on FR4 PCB measured at t 10 sec. c Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction temperature. d Thermal resistance from junction to solder-point at the end of the drain lead . Issue 1 - August 2008 Diodes Incorporated 2008 DISCONTINUED Thermal characteristics ZXMP3F36N8 |
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