ZXMN6A09DN8TC
ZXMN6A09DN8TC Datasheet
ZXMN6A09DN8
| Part | Datasheet |
|---|---|
ZXMN6A09DN8TC |
ZXMN6A09DN8TC (pdf) |
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| ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V D=5.1A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH ZXMN6A09DN8TA ZXMN6A09DN8TC 7” 12mm 13” 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING • ZXMN 6A09D Top View ISSUE 5 - MAY 2005 SEMICONDUCTORS ZXMN6A09DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current VGS=10V TA=25°C b VGS=10V TA=70°C b VGS=10V TA=25°C a Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode c Power Dissipation at TA=25°C a d Linear Derating Factor Power Dissipation at TA=25°C a e Linear Derating Factor Power Dissipation at TA=25°C b d Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD Tj:Tstg LIMIT -55 to +150 UNIT V A A W mW/°C W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient a d Junction to Ambient a e Junction to Ambient b d VALUE 100 69 58 UNIT °C/W °C/W °C/W NOTES a For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper, in still air conditions b For a device surface mounted on FR4 PCB measured at secs. c Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature. d For a device with one active die |
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