ZXMN6A09DN8TC

ZXMN6A09DN8TC Datasheet


ZXMN6A09DN8

Part Datasheet
ZXMN6A09DN8TC ZXMN6A09DN8TC ZXMN6A09DN8TC (pdf)
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ZXMN6A09DN8

DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V BR DSS=60V D=5.1A

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION

DEVICE

REEL SIZE

TAPE WIDTH

ZXMN6A09DN8TA ZXMN6A09DN8TC
7”
12mm
13”
12mm

QUANTITY PER REEL
500 units
2500 units

DEVICE MARKING
• ZXMN
6A09D

Top View

ISSUE 5 - MAY 2005

SEMICONDUCTORS

ZXMN6A09DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate Source Voltage Continuous Drain Current VGS=10V TA=25°C b

VGS=10V TA=70°C b VGS=10V TA=25°C a Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode c Power Dissipation at TA=25°C a d Linear Derating Factor Power Dissipation at TA=25°C a e Linear Derating Factor Power Dissipation at TA=25°C b d Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL VDSS VGS ID

IDM IS ISM PD

Tj:Tstg

LIMIT
-55 to +150

UNIT V A

A W mW/°C W mW/°C W mW/°C °C

THERMAL RESISTANCE

PARAMETER Junction to Ambient a d Junction to Ambient a e Junction to Ambient b d

VALUE 100 69 58

UNIT °C/W °C/W °C/W

NOTES
a For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper, in still air conditions
b For a device surface mounted on FR4 PCB measured at secs.
c Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.
d For a device with one active die
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Datasheet ID: ZXMN6A09DN8TC 510265