ZXM66P02N8TC
ZXM66P02N8TC Datasheet
ZXM66P02N8
| Part | Datasheet |
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ZXM66P02N8TC |
ZXM66P02N8TC (pdf) |
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ZXM66P02N8TA |
ZXM66P02N8TA |
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| NOT RECOMMENDED FOR NEW DESIGN USE DMP2022LSS ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS on -20V ID -8.0A Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode. • Inrush protection circuits • DC-DC Converters • Power management functions • Disconnect switches • Motor control SO-8 • High pulse current handling in linear mode • Low on-resistance • Fast switching speed • Low gate drive • Low profile SOIC package Mechanical Data • Case SO-8 • Case Material Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity Level 1 per J-STD-020 • Terminals Connections See diagram below • Terminals Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight grams approximate Top View Top View Equivalent Circuit Ordering Information Note 1 Product ZXM66P02N8TA Marking See below Notes For packaging details, go to our website. Marking Information Reel size inches 7 Tape width mm 12 Quantity per reel 500 ZXM 66P02 YYWW ZXM = Product Type Marking Code, Line 1 66P02 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year ex 09 = 2009 WW = Week 01-52 ZXM66P02N8 1 of 5 September 2015 Diodes Incorporated Maximum Ratings = 25°C unless otherwise specified Drain-Source voltage Gate-Source voltage Characteristic Continuous Drain current VGS = 4.5V Pulsed Drain current Continuous Source current Body diode Pulsed Source current Body diode Note 3 TA = 70°C Note 3 Note 2 Note 4 Note 3 Note 4 Symbol VDSS VGS IDM IS ISM ZXM66P02N8 Value Unit 12 Thermal Characteristics = 25°C unless otherwise specified Power dissipation Linear derating factor Characteristic Thermal Resistance, Junction to Ambient Operating and storage temperature range Note 2 Note 3 Note 2 Note 3 Symbol PD TJ, TSTG Value 20 80 50 -55 to 150 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Same as note 3 , except the device is measured at t 10 sec. Repetitive rating 25mm x 25mm FR4 PCB, D = pulse width pulse width limited by maximum junction temperature. Unit W mW/C C/W C |
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