ZXM41N10FTA
ZXM41N10FTA Datasheet
ZXM41N10F
| Part | Datasheet |
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ZXM41N10FTA |
ZXM41N10FTA (pdf) |
| Related Parts | Information |
|---|---|
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ZXM41N10FTC |
ZXM41N10FTC |
| PDF Datasheet Preview |
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| Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at Tamb=25°C Pulsed drain current Gate-source voltage Power dissipation at Tamb=25°C Operating and storage temperature range PINOUT TOP VIEW VDS VDGR ID IDM VGS Ptot Tj:Tstg VALUE 100 170 680 ± 20 360 -55 to +150 SOT23 UNIT V mA V mW °C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-source breakdown voltage BVDSS 100 Gate-source threshold voltage VGS th Gate-body leakage IGSS Zero gate voltage drain current IDSS Static drain-source on-state resistance 1 RDS on Forward transconductance 1 2 gfs Input capacitance 2 Ciss Common source output capacitance 2 Coss Turn-on delay time 2 3 td on Rise time 2 3 Turn-off delay time 2 3 td off Fall time 2 3 ID=0.25mA, VGS=0V I =1mA, VDS= VGS=±20V, VDS=0V nA VDS=100V, VGS=0V VGS=4.5V, ID=150mA |
| More datasheets: 5592S | 5592 210 MM X 300 MM 1.5 MM | 5592 210 MM X 300 MM 1.0 MM | 5592 210 MM X 300 MM 2.0 MM | TCM-1000-48G | TCM-1000-24G | AD9234-1000EBZ | AD9680-500EBZ | AD9680-820EBZ | AD9234-500EBZ |
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