ZX3CD3S1M832
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ZX3CD3S1M832TA (pdf) |
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OBSOLETE - PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V RSAT = 104m C = -3A VR = 40V VF = 500mV IC=1A Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height 0.9mm nom Reduced component count 3mm x 2mm Dual Die MLP Cathode C FEATURES • Extremely Low Saturation Voltage -220mV • HFE characterised up to -3A • IC = -3A Continuous Collector Current • Extremely Low VF, fast switching Schottky • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters • Mobile Phones • Charging Circuits • Motor control ORDERING INFORMATION Anode PINOUT DEVICE REEL TAPE QUANTITY WIDTH PER REEL ZX3CD3S1M832TA 8mm 3000 ZX3CD3S1M832TC 8mm 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING ISSUE 3 - OCTOBER 2007 OBSOLETE - PLEASE USE ZXTPS720MC ZX3CD3S1M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Transistor Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current a f Base Current Power Dissipation at TA=25°C a f Linear Derating Factor Power Dissipation at TA=25°C b f Linear Derating Factor Power Dissipation at TA=25°C f Linear Derating Factor Power Dissipation at TA=25°C d f Linear Derating Factor Power Dissipation at TA=25°C d g Linear Derating Factor Power Dissipation at TA=25°C e g Linear Derating Factor Storage Temperature Range Junction Temperature VCBO VCEO VEBO ICM IC IB PD Tstg Tj VALUE -50 -40 -4 -3 1000 12 -55 to +150 UNIT V A mA W mW/°C W mW/°C W mW/°C W mW/°C |
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