DMN3052LSS-13

DMN3052LSS-13 Datasheet


NOT RECOMMENDED FOR NEW DESIGN USE DMN3025LSS

Part Datasheet
DMN3052LSS-13 DMN3052LSS-13 DMN3052LSS-13 (pdf)
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NOT RECOMMENDED FOR NEW DESIGN USE DMN3025LSS

DMN3052LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V BR DSS 30V

RDS ON max VGS = 10V VGS = 4.5V VGS = 2.5V

ID max TA = +25°C
7.1A
6.2A
4.9A
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
• Halogen and Antimony Free. “Green” Device Note 3
• Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This MOSFET has been designed to minimize the on-state resistance RDS on and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters

Mechanical Data
• Case SO-8
• Case Material Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0
• Moisture Sensitivity Level 1 per J-STD-020
• Terminal Connections Indicator See diagram
• Terminals Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight grams approximate

SO-8 TOP VIEW

Top View Internal Schematic

Equivalent circuit
Ordering Information Note 4

Part Number DMN3052LSS-13

Case SO-8

Packaging 2500/Tape & Reel

No purposely added lead. Fully EU Directive 2002/95/EC RoHS & 2011/65/EU RoHS 2 compliant. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine <1500ppm total Br + Cl and
<1000ppm antimony compounds. For packaging details, go to our website at

Marking Information

N3052LS

YY WW

Chengdu A/T Site

DMN3052LSS

N3052LS

YY WW

Shanghai A/T Site
= Manufacturer’s Marking N3052LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year ex 13 = 2013 WW = Week 01 - 53 YY = Date Code Marking for SAT Shanghai Assembly/ Test site YY = Date Code Marking for CAT Chengdu Assembly/ Test site
1 of 6

December 2013

Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMN3025LSS

DMN3052LSS

Maximum Ratings = +25°C, unless otherwise specified.

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Drain Current Note 5

Steady State

Pulsed Drain Current Note 6

TA = +25°C TA = +70°C

Thermal Characteristics

Characteristic Total Power Dissipation Note 5 Thermal Resistance, Junction to Ambient Note 5 Operating and Storage Temperature Range

Symbol VDSS VGSS ID IDM

Symbol PD

TJ, TSTG

Value 30 12 28

Value 50
-55 to +150

Units V A

Unit W
°C/W °C

Electrical Characteristics = +25°C, unless otherwise specified.
More datasheets: BXRC-30E1000-B-03 | BXRC-27E1000-B-03 | BXRC-35E1000-B-03 | BXRC-30E1000-B-02 | BXRC-27G1000-B-02 | BXRC-27E1000-B-02 | BXRC-35E1000-B-02 | BXRC-40G1000-B-02 | BXRC-40E1000-B-02 | BXRC-30G1000-B-02


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived DMN3052LSS-13 Datasheet file may be downloaded here without warranties.

Datasheet ID: DMN3052LSS-13 509934