DMN3007LSSQ
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DMN3007LSSQ-13 (pdf) |
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DMN3007LSSQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS 30V RDS ON max 7m VGS = 10V 10m VGS = 4.5V ID max TA = +25°C 16A 13.5A Description and Applications This MOSFET has been designed to minimize the on-state resistance RDS ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications. x Backlighting x Power Management Functions x DC-DC Converters SO-8 x Low On-Resistance x Low Gate Threshold Voltage x Low Input Capacitance x Fast Switching Speed x Low Input/Output Leakage x Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2 x Halogen and Antimony Free. “Green” Device Note 3 x Qualified to AEC-Q101 Standards for High Reliability x PPAP Available Note 4 Mechanical Data x Case SO-8 x Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 x Moisture Sensitivity Level 1 per J-STD-020 x Terminal Connections Indicator See diagram x Terminals Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 x Weight grams approximate Top View Top View Internal Schematic Equivalent Circuit Ordering Information Note 4 & 5 Part Number DMN3007LSSQ-13 Compliance Automotive Case SO-8 Packaging 2,500/Tape & Reel No purposely added lead. Fully EU Directive 2002/95/EC RoHS & 2011/65/EU RoHS 2 compliant. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine <1500ppm total Br + Cl and <1000ppm antimony compounds. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to For packaging details, go to our website at Marking Information N3007LS YY WW DMN3007LSSQ = Manufacturer’s Marking N3007LS = Product Type Marking Code YYWW = Date Code Marking YY = Year ex 13 = 2013 WW = Week 01 - 53 1 of 5 May 2014 Diodes Incorporated Maximum Ratings = +25°C, unless otherwise specified. Drain-Source Voltage Gate-Source Voltage Drain Current Note 6 Characteristic Pulsed Drain Current Note 7 Steady State TA = +25°C TA = +70°C Symbol VDSS VGSS DMN3007LSSQ Value 30 r20 16 13 Units V Thermal Characteristics Characteristic Total Power Dissipation Note 6 Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RTJA TJ, TSTG Value 50 -55 to +150 Unit W °C/W °C Electrical Characteristics = +25°C, unless otherwise specified. Characteristic OFF CHARACTERISTICS Note 8 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Note 8 Gate Threshold Voltage Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol Min BVDSS |
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