CY7C14141KV18-250BZXC

CY7C14141KV18-250BZXC Datasheet

CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18

Part	Datasheet
CY7C14141KV18-250BZXC	CY7C14141KV18-250BZXC (pdf)

Related Parts	Information
CY7C14141KV18-300BZXC	CY7C14141KV18-300BZXC
CY7C14121KV18-300BZXC	CY7C14121KV18-300BZXC
CY7C14251KV18-250BZC	CY7C14251KV18-250BZC
CY7C14251KV18-250BZI	CY7C14251KV18-250BZI

PDF Datasheet Preview
CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18 36-Mbit II SRAM 2-Word Burst Architecture Configurations • Separate Independent Read and Write Data Ports Supports concurrent transactions • 333 MHz Clock for High Bandwidth CY7C14101KV18 4M x 8 CY7C14251KV18 4M x 9 CY7C14121KV18 2M x 18 • 2-word Burst on all Accesses CY7C14141KV18 1M x 36 • Double Data Rate DDR Interfaces on both Read and Write Ports data transferred at 666 MHz at 333 MHz • Two Input Clocks K and K for Precise DDR Timing SRAM uses rising edges only • Two Input Clocks for Output Data C and C to minimize Clock Skew and Flight Time mismatches • Echo Clocks CQ and CQ simplify Data Capture in High Speed Systems • Single Multiplexed Address Input bus Latches Address Inputs for both Read and Write Ports • Separate Port Selects for Depth Expansion • Synchronous internally Self-timed Writes • II operates with Cycle Read Latency when DOFF is asserted HIGH • Operates similar to QDR I Device with 1 Cycle Read Latency when DOFF is asserted LOW • Available in x8, x9, x18, and x36 Configurations • Full Data Coherency, providing Most Current Data • Core VDD = 1.8V ±0.1V I/O VDDQ = 1.4V to VDD Supports both 1.5V and 1.8V I/O supply • Available in 165-ball FBGA Package 13 x 15 x mm • Offered in both Pb-free and non Pb-free Packages • Variable Drive HSTL Output Buffers • JTAG Compatible Test Access Port • Phase Locked Loop PLL for Accurate Data Placement Functional Description The CY7C14101KV18, CY7C14251KV18, CY7C14121KV18, and CY7C14141KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input K clock. Accesses to the QDR II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with two 8-bit words CY7C14101KV18 , 9-bit words CY7C14251KV18 , 18-bit words CY7C14121KV18 , or 36-bit words CY7C14141KV18 that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks K and K and C and C , memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C or K or K in a single clock domain input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. These devices are down bonded from the 65 nm 72M QDRII+/DDRII+ devices and hence have the same IDD/ISB1 values and the same JTAG ID code as the equivalent 72M device options. For details refer to the application note AN53189, 65 nm Technology Interim QDRII+/DDRII+ SRAM device family description. Table Selection Guide Description Maximum Operating Frequency 333 MHz 300 MHz 250 MHz 200 MHz 167 MHz Unit MHz Maximum Operating Current x8 790 x9 790 x18 810 x36 990 • San Jose, CA 95134-1709 • 408-943-2600 [+] Feedback TAP Registers 13 TAP Instruction Set 13 TAP Controller State Diagram 15 TAP Controller Block Diagram 16 TAP Electrical Characteristics 16 TAP AC Switching Characteristics 17 TAP Timing and Test Conditions 17 Identification Register Definitions 18 Scan Register Sizes 18 Instruction Codes 18 Boundary Scan Order 19 Power Up Sequence in QDR II SRAM 20 Power Up Sequence 20 PLL Constraints 20 Maximum Ratings 21 Operating Range 21 Neutron Soft Error Immunity 21 Electrical Characteristics 21 DC Electrical Characteristics 21 AC Electrical Characteristics 23 Capacitance 24 Thermal Resistance 24 Switching Characteristics 25 Switching Waveforms 27 Ordering Information 28 Package Diagram 28 Document History Page 29 Sales, Solutions, and Legal Information 29 Worldwide Sales and Design Support 29 Products 29 Page 4 of 29 [+] Feedback CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18 Pin Configuration The pin configurations for CY7C14101KV18, CY7C14251KV18, CY7C14121KV18, and CY7C14141KV18 follow.[1] 165-Ball FBGA 13 x 15 x mm Pinout CY7C14101KV18 4M x 8 CQ NC/72M WPS NWS1 K NC/144M RPS A NC/288M K NWS0 VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ DOFF VREF VDDQ VDDQ VDDQ VDDQ VREF VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ CY7C14251KV18 4M x 9 CQ NC/72M K NC/144M RPS A NC/288M K BWS0 VDDQ VDDQ VDDQ VDDQ VDDQ Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at and refer to the product summary page at Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at Table Ordering Information Speed MHz Ordering Code 300 CY7C14121KV18-300BZXC CY7C14141KV18-300BZXC 250 CY7C14251KV18-250BZC CY7C14141KV18-250BZXC CY7C14251KV18-250BZI Package Diagram Package Type Operating Range 51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Pb-Free Commercial 51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Commercial 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Pb-Free 51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Industrial Package Diagram Figure 165-Ball FBGA 13 x 15 x mm , 51-85180 TOP VIEW PIN 1 CORNER 1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P R SEATING PLANE C MAX. C BOTTOM VIEW PIN 1 CORNER M C M C A B 165X 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R 0.15 4X NOTES : SOLDER PAD TYPE NON-SOLDER MASK DEFINED NSMD PACKAGE WEIGHT 0.475g JEDEC REFERENCE MO-216 / ISSUE E PACKAGE CODE BB0AC 51-85180-C Page 28 of 29 [+] Feedback CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18 Document History Page Document Title 36-Mbit II SRAM 2-Word Burst Architecture Document Number 001-56733 ECN No. Orig. of Change Submission Date Description of Change * 2773494 VKN/PYRS 10/01/2009 New Data Sheet A 2797196 VKN/AESA 11/03/09 Included CY7C14251KV18-250BZC and CY7C14251KV18-250BZI part in the Ordering Information table B 2868256 01/28/2010 Included “CY7C14121KV18-300BZXC”, and “CY7C14141KV18-250BZXC” part in the Ordering Information table. C 2884865 02/26/2010 Changed tSA/tSC from ns to ns for 200 MHz, from ns to ns for 250 MHz, and from ns to ns for 333 MHz and 300 MHz D 2888769 03/08/2010 Post to external web Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless PSoC Solutions psoc.cypress.com/solutions PSoC 1 \| PSoC 3 \| PSoC 5 Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code software and/or firmware is owned by Cypress Semiconductor Corporation Cypress and is protected by and subject to worldwide patent protection United States and foreign , United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Page 29 of 29 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback

PDF Datasheet Preview

CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18
36-Mbit II SRAM 2-Word Burst Architecture

Configurations
• Separate Independent Read and Write Data Ports Supports concurrent transactions
• 333 MHz Clock for High Bandwidth

CY7C14101KV18 4M x 8 CY7C14251KV18 4M x 9 CY7C14121KV18 2M x 18
• 2-word Burst on all Accesses

CY7C14141KV18 1M x 36
• Double Data Rate DDR Interfaces on both Read and Write Ports data transferred at 666 MHz at 333 MHz
• Two Input Clocks K and K for Precise DDR Timing SRAM uses rising edges only
• Two Input Clocks for Output Data C and C to minimize Clock Skew and Flight Time mismatches
• Echo Clocks CQ and CQ simplify Data Capture in High Speed Systems
• Single Multiplexed Address Input bus Latches Address Inputs for both Read and Write Ports
• Separate Port Selects for Depth Expansion
• Synchronous internally Self-timed Writes
• II operates with Cycle Read Latency when DOFF is
asserted HIGH
• Operates similar to QDR I Device with 1 Cycle Read Latency when DOFF is asserted LOW
• Available in x8, x9, x18, and x36 Configurations
• Full Data Coherency, providing Most Current Data
• Core VDD = 1.8V ±0.1V I/O VDDQ = 1.4V to VDD Supports both 1.5V and 1.8V I/O supply
• Available in 165-ball FBGA Package 13 x 15 x mm
• Offered in both Pb-free and non Pb-free Packages
• Variable Drive HSTL Output Buffers
• JTAG Compatible Test Access Port
• Phase Locked Loop PLL for Accurate Data Placement

Functional Description

The CY7C14101KV18, CY7C14251KV18, CY7C14121KV18, and CY7C14141KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input K clock. Accesses to the QDR II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with two 8-bit words CY7C14101KV18 , 9-bit words CY7C14251KV18 , 18-bit words CY7C14121KV18 , or 36-bit words CY7C14141KV18 that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks K and K and C and C , memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds.

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C or K or K in a single clock domain input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

These devices are down bonded from the 65 nm 72M QDRII+/DDRII+ devices and hence have the same IDD/ISB1 values and the same JTAG ID code as the equivalent 72M device options. For details refer to the application note AN53189, 65 nm Technology Interim QDRII+/DDRII+ SRAM device family description.

Table Selection Guide

Description Maximum Operating Frequency
333 MHz 300 MHz 250 MHz 200 MHz 167 MHz

Unit MHz

Maximum Operating Current
x8 790
x9 790
x18 810
x36 990
• San Jose, CA 95134-1709
• 408-943-2600
[+] Feedback
TAP Registers 13 TAP Instruction Set 13 TAP Controller State Diagram 15 TAP Controller Block Diagram 16 TAP Electrical Characteristics 16 TAP AC Switching Characteristics 17 TAP Timing and Test Conditions 17 Identification Register Definitions 18 Scan Register Sizes 18 Instruction Codes 18 Boundary Scan Order 19 Power Up Sequence in QDR II SRAM 20 Power Up Sequence 20 PLL Constraints 20 Maximum Ratings 21 Operating Range 21 Neutron Soft Error Immunity 21 Electrical Characteristics 21 DC Electrical Characteristics 21 AC Electrical Characteristics 23 Capacitance 24 Thermal Resistance 24 Switching Characteristics 25 Switching Waveforms 27 Ordering Information 28 Package Diagram 28 Document History Page 29 Sales, Solutions, and Legal Information 29 Worldwide Sales and Design Support 29 Products 29

Page 4 of 29 [+] Feedback

CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18

Pin Configuration

The pin configurations for CY7C14101KV18, CY7C14251KV18, CY7C14121KV18, and CY7C14141KV18 follow.[1]
165-Ball FBGA 13 x 15 x mm Pinout

CY7C14101KV18 4M x 8

CQ NC/72M

WPS NWS1

K NC/144M RPS

A NC/288M K

NWS0

VDDQ

VDDQ

VDDQ

VDDQ

VDDQ

VDDQ

DOFF

VREF

VDDQ

VDDQ

VDDQ

VDDQ

VREF

VDDQ

VDDQ

VDDQ

VDDQ

VDDQ

VDDQ

CY7C14251KV18 4M x 9

CQ NC/72M

K NC/144M RPS

A NC/288M K

BWS0

VDDQ

VDDQ

VDDQ

VDDQ

VDDQ
Ordering Information

The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at and refer to the product summary page at

Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at
Table Ordering Information

Speed MHz
Ordering Code
300 CY7C14121KV18-300BZXC

CY7C14141KV18-300BZXC
250 CY7C14251KV18-250BZC

CY7C14141KV18-250BZXC

CY7C14251KV18-250BZI

Package Diagram

Package Type

Operating Range
51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Pb-Free Commercial
51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm

Commercial
165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm

Industrial

Package Diagram

Figure 165-Ball FBGA 13 x 15 x mm , 51-85180

TOP VIEW

PIN 1 CORNER
1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P R

SEATING PLANE C

MAX. C

BOTTOM VIEW

PIN 1 CORNER

M C M C A B
165X
11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R
0.15 4X

NOTES :

SOLDER PAD TYPE NON-SOLDER MASK DEFINED NSMD PACKAGE WEIGHT 0.475g JEDEC REFERENCE MO-216 / ISSUE E PACKAGE CODE BB0AC
51-85180-*C

Page 28 of 29 [+] Feedback

CY7C14101KV18, CY7C14251KV18 CY7C14121KV18, CY7C14141KV18

Document History Page

Document Title 36-Mbit II SRAM 2-Word Burst Architecture Document Number 001-56733

ECN No.

Orig. of Change

Submission Date

Description of Change
** 2773494 VKN/PYRS 10/01/2009 New Data Sheet
*A 2797196 VKN/AESA 11/03/09 Included CY7C14251KV18-250BZC and CY7C14251KV18-250BZI part in the Ordering Information table
*B 2868256
01/28/2010 Included “CY7C14121KV18-300BZXC”, and “CY7C14141KV18-250BZXC” part in the Ordering Information table.
*C 2884865
02/26/2010 Changed tSA/tSC from ns to ns for 200 MHz, from ns to ns for 250 MHz, and from ns to ns for 333 MHz and 300 MHz
*D 2888769
03/08/2010 Post to external web

Sales, Solutions, and Legal Information

Worldwide Sales and Design Support

Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations.

Products Automotive Clocks & Buffers Interface Lighting & Power Control

Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF
cypress.com/go/automotive cypress.com/go/clocks
cypress.com/go/interface cypress.com/go/powerpsoc
cypress.com/go/plc cypress.com/go/memory
cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB
cypress.com/go/wireless

PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 5

Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Any Source Code software and/or firmware is owned by Cypress Semiconductor Corporation Cypress and is protected by and subject to worldwide patent protection United States and foreign , United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress.

Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Use may be limited by and subject to the applicable Cypress software license agreement.

Page 29 of 29

QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders.
[+] Feedback

More datasheets: WT41-E-AI5 | FIT0277 | 4610M-901-102 | T0782-6CP | FMS6413CS | FMS6413CSX | A000077 | 79210997 | 83806051 | CY7C14141KV18-300BZXC

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Datasheet ID: CY7C14141KV18-250BZXC 508017