LA363B3
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LA363B3CB (pdf) |
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LA363B4CB |
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LA363B3 <r.1 rr.2- LA363B3CB w/2N3055 TO.3 TRANSISTOR 61101 ~zwm~ 190800 I IA I/BI 10/11~,lE ..LI DESCRIPTION OF CURVES N.C. Horiz. Device Only Mounted to G-10. B. N.C. Horiz. & Vert. With Dissipator. FPM w/Diss. D. 500 FPM w/Diss. w 501 cn 0: 1000 FPM w/Diss. n ~ w 1W cn < u 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 POWER DISSIPATED WATTS .Thermal Resistance Case to Sink is °C/W/Joint Compound. .Derate °C/watt for unplated part in natural convection only. .Derate °C/watt for part in natural convection only. Dimensions are for reference use only. ContactlERC for dimehslons with tolerances or standard part drawings. Ordering Information IERC PART NO. Unplated Comm'lB. lack Mil. Black Anodize Anodize LA363B3U lA363B3CB Note See page iv for other finishes LA363B3B Insulube~ 448 LA363B3 LA363B4 LA363B4CB w/2N3055 TO-3 TRANSISTOR rr.1 <r.2-1 0 2 4 6 8 1012141618 202224262830 .Thermal .Derate .Derate POWER DISSIPATED WATTS Resistance Case to Sink is °C/W/Joint Compound. °C/watt for unplated part in natural convection only. °C/watt for part in natural convection only. Dimensions are for reference use only. Contact IERC for dimensions with tolerances or standard part drawings. Ordering Information IERC PART NO. Unplated Comm'l. Black Anodize Mil. Black Anodize LA363B4U LA363B4CB Note See page Iv for other finIshes. LA363B4B Semiconductor I Hpraoetlfte.. I WeMigahxt. Accommodated LA363B4 I Any TO.3 can no. see pg. 1-26 Grams 1-13 |
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