CRF24060FE

CRF24060FE Datasheet

CRF24060

Part	Datasheet
CRF24060FE	CRF24060FE (pdf)

Related Parts	Information
CRF24060-TB	CRF24060-TB

PDF Datasheet Preview
CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor MESFET . SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths compared to Si and GaAs transistors. PackagPeNT:ypCeR:F2444006109F3 • 13 dB Small Signal Gain • High Efficiency • 50 W minimum P1dB • Up to 2400 MHz Operation • 48 V Operation • High Breakdown Voltage • High Temperature Operation • Wideband Military Communications • Secure Comms for Homeland Defense • Class A, A/B Amplifiers • TDMA, EDGE, CDMA, W-CDMA • Broadband Amplifiers • MMDS Typical Performance • Drain Efficiency of 45% at 1500 MHz at 60 W POUT • IMD -31 dBc at 1000 MHz at 50 W PEP • 13 dB Small Signal Gain at 1500 MHz • 60 W P1dB at 1500 MHz • 80 W P3dB at 1500 MHz Note Measured in amplifier circuit CRF24060-TB at VDS = 48 V, IDQ = 2000 mA. Subject to change without notice. Absolute Maximum Ratings not simultaneous at Case Temperature Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case Screw Torque Soldering Temperature Symbol VDSS VGS TSTG TJ T TS Electrical Characteristics TC = Characteristics DC Characteristics3 Gate Threshold Voltage Gate Quiescent Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature RF Characteristics Gain Power Output at 1 dB Compression Power Output at 3 dB Compression Drain Efficiency1,2 VGS th VGS Q IDSS V BR DSS gm TC GSS P1dB P3dB Intermodulation Distortion IMD3 Min. 100 700 -30 10 50 40 Output Mismatch Stress VSWR Notes 1 Drain Efficiency = POUT / PDC 2 Power Added Efficiency PAE = POUT - PIN / PDC 3 Measured on wafer prior to packaging. Typ. -10 -7 800 13 60 80 45 -31 Rating 120 -20, +3 -55, +150 255 80 225 Units Volts in-oz Max. Units Conditions

PDF Datasheet Preview

CRF24060
60 W, SiC RF Power MESFET

Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor MESFET . SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths compared to Si and GaAs transistors.

PackagPeNT:ypCeR:F2444006109F3
• 13 dB Small Signal Gain
• High Efficiency
• 50 W minimum P1dB
• Up to 2400 MHz Operation
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, A/B Amplifiers
• TDMA, EDGE, CDMA, W-CDMA
• Broadband Amplifiers
• MMDS

Typical Performance
• Drain Efficiency of 45% at 1500 MHz at 60 W POUT
• IMD -31 dBc at 1000 MHz at 50 W PEP
• 13 dB Small Signal Gain at 1500 MHz
• 60 W P1dB at 1500 MHz
• 80 W P3dB at 1500 MHz

Note Measured in amplifier circuit CRF24060-TB at VDS = 48 V, IDQ = 2000 mA.

Subject to change without notice.

Absolute Maximum Ratings not simultaneous at Case Temperature

Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case Screw Torque Soldering Temperature

Symbol VDSS VGS TSTG TJ T TS

Electrical Characteristics TC =

Characteristics DC Characteristics3 Gate Threshold Voltage Gate Quiescent Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature RF Characteristics Gain

Power Output at 1 dB Compression

Power Output at 3 dB Compression

Drain Efficiency1,2

VGS th VGS Q IDSS V BR DSS
gm TC

GSS P1dB P3dB

Intermodulation Distortion

IMD3

Min.
100 700 -30
10 50 40

Output Mismatch Stress

VSWR

Notes 1 Drain Efficiency = POUT / PDC 2 Power Added Efficiency PAE = POUT - PIN / PDC
3 Measured on wafer prior to packaging.

Typ.
-10 -7 800
13 60 80 45 -31

Rating 120
-20, +3 -55, +150
255 80 225

Units Volts
in-oz

Max.

Units

Conditions

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived CRF24060FE Datasheet file may be downloaded here without warranties.

Datasheet ID: CRF24060FE 507008