CRF24010-TB

CRF24010-TB Datasheet

CRF24010

Part	Datasheet
CRF24010-TB	CRF24010-TB (pdf)

Related Parts	Information
CRF24010PE	CRF24010PE
CRF24010FE	CRF24010FE

PDF Datasheet Preview
CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor MESFET . SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths compared to Si and GaAs transistors. PacPkNa’sg:eCTRyFp2e4s:01404P01a9n6d and 440166 CRF24010F • 15 dB Small Signal Gain • High Efficiency • 10 W minimum P1dB • Up to 2700 MHz Operation • 48 V Operation • High Breakdown Voltage • High Temperature Operation • Wideband Military Communications • Secure Comms for Homeland Defense • Class A, A/B Amplifiers • TDMA, EDGE, CDMA, W-CDMA • Broadband Amplifiers • MMDS Typical Performance • Drain Efficiency of 45% at 1950 MHz • IMD -31 dBc at 1950 MHz • 15 dB Gain at 1950 MHz Note Measured in amplifier circuit CRF24010-TB at VDS = 48 V, IDQ = 500 mA. Subject to change without notice. Absolute Maximum Ratings not simultaneous at Case Temperature Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Thermal Resistance, Junction to Case Screw Torque1 Soldering Temperature Symbol VDSS VGS TSTG TJ IGMAX T TS Electrical Characteristics TC = Rating 120 -20, +3 -55, +150 255 60 225 Units Volts mA in-oz Characteristics DC Characteristics Gate Threshold Voltage Gate Quiescent Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature RF Characteristics Gain Power Output at 1 dB Compression Power Output at 3 dB Compression Drain Efficiency2,3 VGS th VGS Q IDSS V BR DSS gm TC GSS P1dB P3dB Min. 100 140 -30 13 10 15 40 Intermodulation Distortion IMD3 Minimum Noise Figure NFmin Output Mismatch Stress VSWR Dynamic Characteristics Input Capacitance Output Capacitance Notes 1 Torque for the 440166 package type. 2 Drain Efficiency = POUT / PDC 3 Power Added Efficiency PAE = POUT - PIN / PDC Typ.

PDF Datasheet Preview

CRF24010
10 W, SiC RF Power MESFET

Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor MESFET . SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power density, and wider bandwidths compared to Si and GaAs transistors.

PacPkNa’sg:eCTRyFp2e4s:01404P01a9n6d
and 440166 CRF24010F
• 15 dB Small Signal Gain
• High Efficiency
• 10 W minimum P1dB
• Up to 2700 MHz Operation
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, A/B Amplifiers
• TDMA, EDGE, CDMA, W-CDMA
• Broadband Amplifiers
• MMDS

Typical Performance
• Drain Efficiency of 45% at 1950 MHz
• IMD -31 dBc at 1950 MHz
• 15 dB Gain at 1950 MHz

Note Measured in amplifier circuit CRF24010-TB at VDS = 48 V, IDQ = 500 mA.

Subject to change without notice.

Absolute Maximum Ratings not simultaneous at Case Temperature

Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Thermal Resistance, Junction to Case Screw Torque1 Soldering Temperature

Symbol VDSS VGS TSTG TJ IGMAX T TS

Electrical Characteristics TC =

Rating 120
-20, +3 -55, +150
255 60 225

Units Volts
mA in-oz

Characteristics DC Characteristics Gate Threshold Voltage Gate Quiescent Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature RF Characteristics Gain

Power Output at 1 dB Compression

Power Output at 3 dB Compression

Drain Efficiency2,3

VGS th VGS Q IDSS V BR DSS
gm TC

GSS P1dB P3dB

Min.
100 140 -30
13 10 15 40

Intermodulation Distortion

IMD3

Minimum Noise Figure

NFmin

Output Mismatch Stress

VSWR

Dynamic Characteristics

Input Capacitance

Output Capacitance

Notes 1 Torque for the 440166 package type. 2 Drain Efficiency = POUT / PDC 3 Power Added Efficiency PAE = POUT - PIN / PDC

Typ.

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Datasheet ID: CRF24010-TB 507007