CMF10120D
CMF10120D Datasheet
CMF10120D-Silicon Carbide Power MOSFET
| Part | Datasheet |
|---|---|
CMF10120D |
CMF10120D (pdf) |
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| CMF10120D-Silicon Carbide Power MOSFET Z-F MOSFET eTTM = 1200 V N-Channel Enhancement Mode ID MAX = 2 4 A RDS on Package • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS on • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant TO-247-3 • Higher System Efficiency • Reduced Cooling Requirements • Increased System Switching Frequency • Solar Inverters • High Voltage DC/DC Converters • Motor Drives • Switch Mode Power Supplies Maximum Ratings TC = unless otherwise specified Part Number CMF10120D Package TO-247-3 Parameter Value Unit Test Conditions Note Continuous Drain Current IDpulse Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy Fig. 10 A Pulse width tP limited by Tjmax J ID = 10A, VDD = 50 V, L = 20 mH J tAR limited by Tjmax Fig. 15 Repetitive Avalanche Current VGS Gate Source Voltage 10 -5/+25 A ID = 10A, VDD = 50 V, L = 15 mH tAR limited by Tjmax Ptot Power Dissipation TJ , Tstg Operating Junction and Storage Temperature Solder Temperature Mounting Torque -55 to +135 Fig. 9 1.6mm from case for 10s Nm lbf-in M3 or 6-32 screw Electrical Characteristics TC = unless otherwise specified |
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