CPDZ3V3U-HF

CPDZ3V3U-HF Datasheet

CPDZ3V3U-HF

Part	Datasheet
CPDZ3V3U-HF	CPDZ3V3U-HF (pdf)

PDF Datasheet Preview
SMD ESD Protection Diode CPDZ3V3U-HF RoHS Device Halogen Free - Uni-directional ESD protection. - Surface mount package. - Ultra small SMD package:0201 - High component density. - Low clamping voltage. - Low leakage. Mechanical data - Case 0201/DFN0603 package, molded plastic. - Terminals Gold plated, solderable per MIL-STD-750, method - Polarity Color band denotes cathode end. - Mounting position Any Circuit diagram 0201/DFN0603 REF. REF. Dimensions in inches and millimeter Maximum Rating AND Electrical Characteristics at TA=25°C unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit VRWM Breakdown voltage IR = 1mA Forward voltage IF = 10 mA Leakage current VR = 3.3V Junction capacitance ESD capability Clamping voltage Peak pulse power VR = 0V, f=1MHZ IEC 61000-4-2 air IEC 61000-4-2 contact IPP = 1A,TP=8/20us IPP = 6.5A,TP=8/20us TP=8/20us CT ESD VC PPP Operation temperature Storage temperature TSTG QW-JPXXX Company reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES CPDZ3V3U-HF Percentage of Ipp 120% 100% Fig.1 - 8/20us Peak Pulse Current Waveform Acc. IEC 6100-4-5 Ta=25°C Peak Valur Ipp Test Waveform parameters tf=8us td=20us

PDF Datasheet Preview

SMD ESD Protection Diode

CPDZ3V3U-HF

RoHS Device Halogen Free
- Uni-directional ESD protection. - Surface mount package. - Ultra small SMD package:0201 - High component density. - Low clamping voltage. - Low leakage.

Mechanical data
- Case 0201/DFN0603 package, molded plastic.
- Terminals Gold plated, solderable per MIL-STD-750, method
- Polarity Color band denotes cathode end. - Mounting position Any

Circuit diagram
0201/DFN0603

REF.

REF.

Dimensions in inches and millimeter

Maximum Rating AND Electrical Characteristics
at TA=25°C unless otherwise noted

Parameter

Conditions Symbol Min Typ Max Unit

VRWM

Breakdown voltage

IR = 1mA

Forward voltage

IF = 10 mA

Leakage current

VR = 3.3V

Junction capacitance ESD capability Clamping voltage Peak pulse power

VR = 0V, f=1MHZ IEC 61000-4-2 air IEC 61000-4-2 contact IPP = 1A,TP=8/20us IPP = 6.5A,TP=8/20us TP=8/20us

CT ESD VC PPP

Operation temperature

Storage temperature

TSTG

QW-JPXXX

Company reserves the right to improve product design , functions and reliability without notice.

Comchip Technology CO., LTD.

SMD ESD Protection Diode

RATING AND CHARACTERISTIC CURVES CPDZ3V3U-HF

Percentage of Ipp
120% 100%

Fig.1 - 8/20us Peak Pulse Current Waveform Acc. IEC 6100-4-5

Ta=25°C Peak Valur Ipp

Test Waveform parameters
tf=8us td=20us

More datasheets: PTH05060YAZT | PTH05060YAZ | 342-070-500-202 | M5420 NC002 | M5420 NC005 | M5420 NC001 | KFF6636A | 2515 | MAL211838338E3 | MAL211828338E3

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived CPDZ3V3U-HF Datasheet file may be downloaded here without warranties.

Datasheet ID: CPDZ3V3U-HF 506251