CPDT5-5V0
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CPDT5-5V0 (pdf) |
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SMD ESD Protection Diode CPDT5-5V0 RoHS Device -Common anode ESD protection. -IEC61000-4-2 Level 4 ESD protection. -Low operating voltage < 5V. -Fast turn-on and low clamping voltage. Mechanical data -Case SOT-23-5 Standard package, molded plastic. -Terminals Tin plated, solderable per MIL-STD-750, method -Marking code:E05 -Mounting position Any. -Weight gram approx. . SOT-23-5 Dimensions in inches and millimeter 123 GND Electrical Characteristics at TA=25°C unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Diode breakdown voltage IR = 1mA Leakage current VR = 5V Junction capacitance VR =0V,f =1MHz ESD capability IEC 61000-4-2 air IEC 61000-4-2 contact 16 kV Clamping voltage IPP = 5A,TP=8/20us Peak pulse power TP=8/20us Operation temperature Storage temperature TSTG Company reserves the right to improve product design , functions and reliability without notice. QW-BP015 Comchip Technology CO., LTD. SMD ESD Protection Diode Percentage of Ipp RATING AND CHARACTERISTIC CURVES CPDT5-5V0 Fig. 1 - 8/20us Peak pulse current waveform acc. IEC 61000-4-5 120% 100% Ta=25°C Peak Valur Ipp Test Waveform parameters tf=8us td=20us |
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