CDBHD220-G Thru 260-G
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CDBHD240-G (pdf) |
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CDBHD260-G |
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Schottky Bridge Rectifiers COMCHIP SMD DIODE SPECIALIST CDBHD220-G Thru 260-G • Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • Highsurge current capability • Silicon epitaxial planar chips ~ • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • Lead-free part, meet RoHS requirements Mini-DIP Max. Mechanical Data • Case Mini-Dip bridge TO-269AA plastic molded case • Epoxy UL94-V0 rated flame retardant • Terminals Solderable per MIL-STD-750 Method 2026 • Polarity As marked on body • Mounting Position Any • Weight ounces, grams Max. MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified CDBHD - Symbols Unit :inch mm Units VRRM Volts Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage Volts Maximum Average Forward Rectified Current 0.2x0.2” 5.0x5.0mm copper pad area, see Figure 1 Peak Forward Surge Current 8.3mS single half sine-wave superimp osed on rated load JEDEC Me thod Maximum Forward Voltage at 1.0A Note 1 IAV IFSM TA= 25°C TA= 100°C Typical Junction Capacitance Note 2 Amps Amps Volts mA Typical Thermal Resistance Note 3 °C/W Operating Junction Temperature Range |
More datasheets: CY2304SC-1 | DFR0198 | 10821FT | 1871872 | 1871875 | 1871873 | N1030 12 | 7343-2SURC/H2/S530-A5 | 3014 | 153 |
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