CQ202-4DS-2
CQ202-4DS-2 Datasheet
CQ202-4BS-2 CQ202-4DS-2 CQ202-4MS-2 CQ202-4NS-2
| Part | Datasheet |
|---|---|
CQ202-4DS-2 |
CQ202-4DS-2 (pdf) |
| Related Parts | Information |
|---|---|
|
CQ202-4BS-2 |
CQ202-4BS-2 |
|
CQ202-4NS-2 |
CQ202-4NS-2 |
|
CQ202-4MS-2 |
CQ202-4MS-2 |
| PDF Datasheet Preview |
|---|
| CQ202-4BS-2 CQ202-4DS-2 CQ202-4MS-2 CQ202-4NS-2 AMP TRIAC 200 THRU 800 VOLTS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR CQ202-4BS-2 series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants. MARKING FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS TC=25°C unless otherwise noted CQ202 SYMBOL -4BS-2 Peak Repetitive Off-State Voltage VDRM RMS On-State Current TC=80°C IT RMS Peak Non-Repetitive Surge Current t=8.3ms ITSM Peak Non-Repetitive Surge Current t=10ms ITSM I2t Value for Fusing t=10ms Peak Gate Power tp=10us Average Gate Power Dissipation Peak Gate Current tp=10us Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance PGM PG AV IGM Tstg TJ ΘJA ΘJC CQ202 -4DS-2 CQ202 -4MS-2 -40 to +150 -40 to +125 CQ202 -4NS-2 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted SYMBOL TEST CONDITIONS IDRM Rated VDRM, RGK=1.0KΩ IDRM Rated VDRM, RGK=1.0KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1.0KΩ VD=12V, QUAD I, II, III ITM=6.0A, tp=380us dv/dt VDRM, TC=125°C MAX 10 200 UNITS V A A2s W A °C °C °C/W °C/W UNITS uA mA V/us R2 23-April 2012 |
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