CPD24-CMR1F-06M-CT
CPD24-CMR1F-06M-CT Datasheet
CPD24-CMR1F-06M
| Part | Datasheet |
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CPD24-CMR1F-06M-CT |
CPD24-CMR1F-06M-CT (pdf) |
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| w. c e n t r a l s e m i c o m CPD24-CMR1F-06M Fast Rectifier Die Amp, 600 Volt The CPD24-CMR1F-06M is a silicon Amp, 600 Volt fast recovery ideal for all types of commercial, industrial, entertainment, and computer applications. ANODE BACKSIDE CATHODE MECHANICAL SPECIFICATIONS: Die Size 51 x 51 MILS Die Thickness 11 MILS Anode Bonding Pad Size 35 x 35 MILS Top Side Metalization Ni/Au Back Side Metalization Ni/Au Scribe Alley Width MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 4,250 SYMBOL VRRM VR VR RMS IO IFSM TJ, Tstg 600 420 30 -65 to +150 ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise SYMBOL TEST CONDITIONS VR=600V VR=600V, TA=125°C IF=1.0A IF=0.5A, IR=1.0A, Irr=0.25A MAX 200 250 UNITS V A °C UNITS uA V ns PACKING OPTIONS • CPD24-CMR1F-06M-CT Singulated die in waffle pack 400 die per tray. • CPD24-CMR1F-06M-WN Full wafer, unsawn, 100% tested with reject die inked. • CPD24-CMR1F-06M-WR Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. R0 4-March 2015 CPD24-CMR1F-06M Typical Electrical Characteristics w. c e n t r a l s e m i c o m R0 4-March 2015 |
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