CPD16-CMR1U-06M-CT
CPD16-CMR1U-06M-CT Datasheet
CPD16-CMR1U-06M
| Part | Datasheet |
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CPD16-CMR1U-06M-CT |
CPD16-CMR1U-06M-CT (pdf) |
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| w. c e n t r a l s e m i c o m CPD16-CMR1U-06M Ultra Fast Rectifier Die Amp, 600 Volt The CPD16-CMR1U-06M is a silicon Amp, 600 Volt ultra fast recovery ideal for all types of commercial, industrial, entertainment, and computer applications. ANODE BACKSIDE CATHODE R0 MECHANICAL SPECIFICATIONS: Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Size 34 x 34 MILS Top Side Metalization Ni/Au Back Side Metalization Ni/Au Scribe Alley Width MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 4,250 ELECTRICAL CHARACTERISTICS TA=25°C SYMBOL TEST CONDITIONS VR=600V IF=1.0A IF=0.5A, IR=1.0A, Irr=0.25A SYMBOL VRRM VR VR RMS IO IFSM TJ, Tstg 600 420 30 -65 to +150 MAX 75 UNITS V A °C UNITS uA V ns PACKING OPTIONS • CPD16-CMR1U-06M-CT Singulated die in waffle pack 400 die per tray. • CPD16-CMR1U-06M-WN Full wafer, unsawn, 100% tested with reject die inked. • CPD16-CMR1U-06M-WR Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. R0 4-March 2015 CPD16-CMR1U-06M Typical Electrical Characteristics w. c e n t r a l s e m i c o m R0 4-March 2015 |
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