2N2480

2N2480 Datasheet


2N2480 2N2480A

Part Datasheet
2N2480 2N2480 2N2480 (pdf)
Related Parts Information
2N2480A 2N2480A 2N2480A
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2N2480 2N2480A

SILICON DUAL NPN TRANSISTORS
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

VCBO

VCEO

VEBO

Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice

Operating and Storage Junction Temperature

TJ, Tstg
-65 to +200

ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted
2N2480
2N2480A

SYMBOL TEST CONDITIONS

MIN MAX

MIN MAX

ICBO IEBO BVCBO

VCB=60V VCB=30V, TA=150°C VEB=5.0V IC=100uA

BVCEO BVEBO VCE SAT VBE SAT

IC=20mA IE=100uA IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA

VCE=5.0V, IC=100uA

VCE=5.0V, IC=1.0mA

VCE=10V, IC=50mA, f=20MHz

VCB=10V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz
1000 5000

VCB=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=10V, IC=0.3mA, RS=510Ω,
f=1.0kHz, BW=1.0Hz

UNITS V mA
mW °C

UNITS nA uA nA V

MHz pF Ω Ω uS

MATCHING CHARACTERISTICS:
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Datasheet ID: 2N2480 522758