2N2480
2N2480 Datasheet
2N2480 2N2480A
| Part | Datasheet |
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2N2480 |
2N2480 (pdf) |
| Related Parts | Information |
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2N2480A |
2N2480A |
| PDF Datasheet Preview |
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| 2N2480 2N2480A SILICON DUAL NPN TRANSISTORS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature TJ, Tstg -65 to +200 ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted 2N2480 2N2480A SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO IEBO BVCBO VCB=60V VCB=30V, TA=150°C VEB=5.0V IC=100uA BVCEO BVEBO VCE SAT VBE SAT IC=20mA IE=100uA IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=100uA VCE=5.0V, IC=1.0mA VCE=10V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz 1000 5000 VCB=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=10V, IC=0.3mA, RS=510Ω, f=1.0kHz, BW=1.0Hz UNITS V mA mW °C UNITS nA uA nA V MHz pF Ω Ω uS MATCHING CHARACTERISTICS: |
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