2N2223A

2N2223A Datasheet

2N2223 2N2223A

Part	Datasheet
2N2223A	2N2223A (pdf)

Related Parts	Information
2N2223	2N2223

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2N2223 2N2223A SILICON DUAL NPN TRANSISTORS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature VCBO VCER VCEO VEBO IC PD TJ, Tstg 100 80 60 500 600 -65 to +200 UNITS V mA mW °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted SYMBOL TEST CONDITIONS ICBO VCB=80V ICBO VCB=80V, TA=150°C IEBO VEB=5.0V BVCBO IC=100uA BVCER IC=100mA, REB=10Ω BVCEO IC=30mA BVEBO IE=100uA VCE SAT VBE SAT hFE IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=10uA VCE=5.0V, IC=100uA VCE=5.0V, IC=10mA VCE=10V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCB=5.0V, IC=1.0mA, f=1.0kHz VCB=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCB=5.0V, IC=1.0mA, f=1.0kHz UNITS nA uA nA V MHz pF Ω x10-4 MATCHING CHARACTERISTICS:

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2N2223 2N2223A

SILICON DUAL NPN TRANSISTORS
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature

VCBO VCER VCEO VEBO

IC PD TJ, Tstg
100 80 60 500 600 -65 to +200

UNITS V mA
mW °C

ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted

SYMBOL TEST CONDITIONS

ICBO

VCB=80V

ICBO

VCB=80V, TA=150°C

IEBO

VEB=5.0V

BVCBO

IC=100uA

BVCER

IC=100mA, REB=10Ω

BVCEO

IC=30mA

BVEBO

IE=100uA

VCE SAT VBE SAT hFE

IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=10uA VCE=5.0V, IC=100uA

VCE=5.0V, IC=10mA

VCE=10V, IC=50mA, f=20MHz

VCB=10V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCB=5.0V, IC=1.0mA, f=1.0kHz

VCB=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCB=5.0V, IC=1.0mA, f=1.0kHz

UNITS nA uA nA V

MHz pF Ω x10-4

MATCHING CHARACTERISTICS:

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Datasheet ID: 2N2223A 522756