NE3511S02-A

NE3511S02-A Datasheet

NE3511S02

Part	Datasheet
NE3511S02-A	NE3511S02-A (pdf)

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Drop-In DISReplacement CONTICE3512K2 NUED HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET • Super low noise figure and high associated gain NF = dB TYP., Ga = dB TYP. f = 12 GHz • Micro-X plastic S02 package • X to Ku-band DBS LNB • Other X to Ku-band communication systems ORDERING INFORMATION Order Number Package Quantity NE3511S02-T1C NE3511S02-T1C-A S02 Pb-Free 2 kpcs/reel NE3511S02-T1D NE3511S02-T1D-A 10 kpcs/reel Marking Supplying Form • 8 mm wide embossed taping • Pin 4 Gate faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order NE3511S02-A ABSOLUTE MAXIMUM RATINGS TA = +25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Ratings Unit −3 ID IG Ptot Note IDSS 100 165 mA µA mW +125 Tstg −65 to +125 Note Mounted on cm2 x mm t glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10642EJ01V0DS 1st edition Date Published October 2006 NS CP N Drop-In DISReplacement CONTICE3512K2 NUED NE3511S02 RECOMMENDED OPERATING CONDITIONS TA = +25°C Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 − TYP. 2 10 − MAX. 3 20 0 Unit V mA ELECTRICAL CHARACTERISTICS TA = +25°C, unless otherwise specified Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain Test Conditions IGSO VGS = −3 V IDSS VDS = 2 V, VGS = 0 V

PDF Datasheet Preview

Drop-In DISReplacement CONTICE3512K2 NUED

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3511S02

X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• Super low noise figure and high associated gain NF = dB TYP., Ga = dB TYP. f = 12 GHz
• Micro-X plastic S02 package
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems
ORDERING INFORMATION

Order Number

Package

Quantity

NE3511S02-T1C NE3511S02-T1C-A S02 Pb-Free 2 kpcs/reel

NE3511S02-T1D NE3511S02-T1D-A
10 kpcs/reel

Marking

Supplying Form
• 8 mm wide embossed taping
• Pin 4 Gate faces the perforation side
of the tape

Remark To order evaluation samples, contact your nearby sales office. Part number for sample order NE3511S02-A

ABSOLUTE MAXIMUM RATINGS TA = +25°C

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature

Ratings

Unit
−3

ID IG Ptot Note

IDSS 100 165
mA µA mW
+125

Tstg
−65 to +125

Note Mounted on cm2 x mm t glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10642EJ01V0DS 1st edition Date Published October 2006 NS CP N

Drop-In DISReplacement CONTICE3512K2 NUED

NE3511S02

RECOMMENDED OPERATING CONDITIONS TA = +25°C

Parameter Drain to Source Voltage Drain Current Input Power

Symbol VDS ID Pin

MIN. 1 5 −

TYP. 2 10 −

MAX. 3 20 0

Unit V mA

ELECTRICAL CHARACTERISTICS TA = +25°C, unless otherwise specified

Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain

Test Conditions

IGSO VGS = −3 V

IDSS VDS = 2 V, VGS = 0 V

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NE3511S02-A Datasheet file may be downloaded here without warranties.

Datasheet ID: NE3511S02-A 522745