Agilent WS2512 4 x 4 Power Amplifier Module for UMTS2100 1920 1980 MHz
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WS2512-BLK (pdf) |
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Agilent WS2512 4 x 4 Power Amplifier Module for UMTS2100 1920 1980 MHz Data Sheet The WS2512, a Wide-band Code Division Multiple Access WCDMA Power Amplifier PA , is a fully matched 10-pin surface mount module developed for WCDMA handset applications. This power amplifier module operates in the 1920 1980 MHz bandwidth. The WS2512 meets the stringent WCDMA linearity requirements for output power of up to 28 dBm. A low current Vcont pin is provided for high efficiency improvement of the low output power range. The WS2512 features CoolPAM Circuit technology offering stateof-the-art reliability, temperature stability and ruggedness. The WS2512 is self contained, incorporating 50ohm input and output matching networks. • CoolPAM circuit technology • Good linearity • High efficiency • 10-pin surface mounting package 4 mm x 4 mm x mm • Low power-state control • Low quiescent current • Internal matching networks for both RF input and output • W-CDMA handsets • HSDPA handsets Functional Block Diagram Vcc2 10 RF Input 2 Input Match Inter Stage Match Vcc1 1 MMIC Bias Circuit & Control Logic Vcont 4 Vref 5 Output Match RF Output 8 MODULE Table Absolute Maximum Ratings[1] Parameter RF Input Power DC Supply Voltage DC Reference Voltage Storage Temperature Min. Typical Max. Unit Vref Tstg +125 Table Recommended Operating Conditions Parameter DC Supply Voltage Mid/High Power Mode Low Power Mode DC Reference Voltage Mode Control Voltage High Power Mode Low/Mid Power Mode Operating Frequency Ambient Temperature Min. Typical Max. Ordering Information Number of Devices WS2512-BLK WS2512-TR1 2500 Container Bulk 13" Tape and Reel Tape and Reel Information Dimension List Annote A0 B0 K0 D0 D1 P0 P1 Millimeter Annote P2 P10 E F W T Figure Tape and Reel Format 4 mm x 4 mm. Millimeter Tape and Reel Information, continued all dimensions are in millimeters Figure Plastic Reel Format Handling and Storage MSL Moisture Sensitivity Level ESD Electrostatic Discharge Electrostatic discharge occurs naturally in the environment. With the increase in voltage potential, the outlet of neutralization or discharge will be sought. If the acquired discharge route is through a semiconductor device, destructive damage will result. ESD countermeasure methods should be developed and used to control potential ESD damage during handling in a factory environment at each manufacturing site. Plastic encapsulated surface mount package is sensitive to damage induced by absorbed moisture and temperature. Agilent Technologies follows JEDEC Standard J-STD 020B. Each component and package type is classified for moisture sensitivity by soaking a known dry package at various temperatures and relative humidity, and times. After soak, the components are subjected to three consecutive simulated reflows. The out of bag exposure time maximum limits are determined by the classification test Table ESD Classification described below which corresponds to a MSL classification level 6 to 1 according to the JEDEC standard IPC/JEDEC J-STD-020B and J-STD-033. WS2512 is MSL3. Thus, according to the J-STD-033 p.11 the maximum Manufacturers Exposure Time MET for this part is 168 hours. After this time period, the part would need to be removed from the reel, de-taped and then re-baked. MSL classification reflow temperature for the WS2512 is targeted at 250° C +0/-5° C. Figure 32 and Table 9 show typical SMT profile for maximum temperature of 250+0/-5° C. Pin# Name Vcc1 Supply Voltage RF In RF Input Ground Vcont Control Voltage Vref Reference Voltage Ground Ground RFOut |
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