VMMK-2503-TR2G

VMMK-2503-TR2G Datasheet


VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package

Part Datasheet
VMMK-2503-TR2G VMMK-2503-TR2G VMMK-2503-TR2G (pdf)
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VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package

Data Sheet

Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a transmitter driver in many applications from A 5V, 65mA power supply is required for optimal performance. This amplifier is fabricated with enhancement E-pHEMT technology and industry leading wafer level package. The GaAsCap wafer level package is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. WLP 0402, 1mm x 0.5mm x mm

Pin Connections Top View
• 1 x mm Surface Mount Package
• Ultrathin 0.25mm
• Unconditionally Stable
• Ultrawide Bandwidth
• Gain Block or Driver Amplifier
• RoHS6 + Halogen Free

Typical Performance Vdd = 5.0V, Idd = 65mA
• Output IP3 27dBm
• Small-Signal Gain 13.5dB
• Noise Figure 3.4dB
• GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications
• & BWA systems
• Radar, radio and ECM systems
• UWB

Input

Output / Vdd

Output
/ Vdd

Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60V ESD Human Body Model = 625V Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control.

Note “G” = Device Code “Y” = Month Code

Table Absolute Maximum Ratings [1]

Parameters/Condition

Unit

Supply Voltage RF Output [2]

Device Current [2]

Pin, max

CW RF Input Power RF Input [3]

Pdiss

Total Power Dissipation

Max channel temperature

Thermal Resistance [4]
°C/W

Notes Operation in excess of any of these conditions may result in permanent damage to this device. Bias is assumed DC quiescent conditions With the DC typical bias and RF applied to the device at board temperature Tb = 25°C Thermal resistance is measured from junction to board using IR method

Absolute Max 6 120 +20 720 150 140

Table DC and RF Specifications TA= 25°C, Frequency = 6 GHz, Vd = 5V, Zin = Zout = unless otherwise specified

Parameters/Condition

Device Current

NF[1,2]

Noise Figure

Ga [1,2]

Associated Gain

OIP3 [1,2,3]

Output 3rd Order Intercept

P-1dB[1,2]

Output Power at 1dB Gain Compression

IRL [1,2]
Ordering Information

Part Number VMMK-2503-BLKG VMMK-2503-TR1G

Devices Per Container 100
5000

Container Antistatic Bag 7” Reel

Package Dimension Outline

A Note All dimensions are in mm

Reel Orientation

REEL

Die dimension:

Range

Unit

D - mm

E - mm

A - mm

Device Orientation

USER FEED DIRECTION 4 mm

USER FEED DIRECTION

CARRIER TAPE
•GY
•GY
•GY
•GY

TOP VIEW

Note “G” = Device Code ”Y” = Month Code
8 mm END VIEW

E F Note 2 W Bo Scale 5:1

SECTION

Tape Dimensions

Note 2

Note 1

T 5° Max

A R0.1
5° Max

Scale 5:1

SECTION

Unit mm

Symbol K1 Po P1 P2 Do D1 E F 10Po W T

Spec.

Ao = mm

Bo = mm

Notice 10 Sprocket hole pitch cumulative tolerance is ±0.1mm. Pocket position relative to sprocket hole measured as true position
of pocket not pocket hole. Ao & Bo measured on a place 0.3mm above the bottom of the
pocket to top surface of the carrier. Ko measured from a plane on the inside bottom of the pocket to
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Datasheet ID: VMMK-2503-TR2G 520531