VMMK-2103-TR2G

VMMK-2103-TR2G Datasheet

VMMK-2103 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package

Part	Datasheet
VMMK-2103-TR2G	VMMK-2103-TR2G (pdf)

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VMMK-2103 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package Data Sheet Avago’s VMMK-2103 is an easy-to-use GaAs MMIC bypass LNA that offers good noise figure and flat gain from to 6 GHz in a miniaturized wafer-level package WLP . The bias circuit incorporates a power down feature which is accessed from the input port. This device contains an integrated bypass switch which engages when the amplifier is in shut down mode, resulting in an improvement in the input compression point while consuming minimal current. The input and output are matched to 50 Ω better than 2:1 SWR across the entire bandwidth no external matching is needed. This amplifier is fabricated with enhancement E-pHEMT technology and industry leading wafer level package. The WLP leadless package is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly. WLP 0402, 1mm x 0.5mm x mm Pin Connections Top View Input / Vc Output / Vdd • 1 x mm Surface Mount Package • Ultrathin 0.25mm • LNA Bypass function • 5V Supply • RoHS6 + Halogen Free Specifications at 3GHz, Vd = Vc = 5V, 23mA Typ. • Noise Figure 2.1dB typical • Loss in Bypass Mode 2.3dB • Associated Gain 14dB • Input IP3 in Gain Mode +8dBm • Input IP3 in Bypass Mode +21 dBm • Input P1dB in Gain Mode 0dBm • Input P1dB in Bypass Mode +17dBm • Low Noise and Driver for Cellular/PCS and WCDMA Base Stations • GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications • & BWA systems • WLL and MMDS Transceivers • Radar, radio and ECM Systems Input Output / Vdd Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model =50V ESD Human Body Model =125V Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control. Note “C” = Device Code “Y” = Month Code Table Absolute Maximum Ratings [1] Parameters/Condition Unit Supply Voltage RF Output [2] Bypass Control Voltage Device Current [2] Pin, max CW RF Input Power RF Input [3] Pdiss Total Power Dissipation Max channel temperature Θjc Thermal Resistance [4] °C/W Notes Operation in excess of any of these conditions may result in permanent damage to this device. Bias is assumed DC quiescent conditions With the DC typical bias in both modes and RF applied to the device at board temperature Tb = 25°C Thermal resistance is measured from junction to board using IR method Absolute Max 8 6 40 +20 320 150 110 Table DC and RF Specifications TA= 25°C, Frequency = 3 GHz, Vd = 5V, Vc=5V, unless otherwise specified Parameters/Condition Unit Minimum Typ. Device Current Ordering Information Part Number VMMK-2103-BLKG VMMK-2103-TR1G Devices Per Container 100 5000 Container Antistatic Bag 7” Reel Package Dimension Outline A Note All dimensions are in mm Reel Orientation REEL Die dimension: Range Unit D - mm E - mm A - mm Device Orientation USER FEED DIRECTION 4 mm USER FEED DIRECTION CARRIER TAPE •CY •CY •CY •CY TOP VIEW Note “C” = Device Code ”Y” = Month Code 8 mm END VIEW Tape Dimensions Note 2 Note 1 T 5° Max E F Note 2 W Bo Scale 5:1 B SECTION R0.1 5° Max Unit mm Symbol K1 Po P1 P2 Do D1 E F 10Po W T Scale 5:1 A SECTION Ao = mm Bo = mm USnpite:cm. m 4K.10±0.10 4P.o0±0.10 2P.10±0.05 1P.255±0.05 0D.5o±0.05 1D.715±0.10 3E.50±0.05 4F0.0±0.10 81.00P±o0.20 0W.20±0.02 T Notice: 10 Sprocket hole pitch cumulative tolerance is ±0.1mm. Spec.

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VMMK-2103 to 6 GHz Bypass E-pHEMT LNA in Wafer Level Package

Data Sheet

Avago’s VMMK-2103 is an easy-to-use GaAs MMIC bypass LNA that offers good noise figure and flat gain from to 6 GHz in a miniaturized wafer-level package WLP . The bias circuit incorporates a power down feature which is accessed from the input port. This device contains an integrated bypass switch which engages when the amplifier is in shut down mode, resulting in an improvement in the input compression point while consuming minimal current.

The input and output are matched to 50 Ω better than 2:1 SWR across the entire bandwidth no external matching is needed. This amplifier is fabricated with enhancement E-pHEMT technology and industry leading wafer level package. The WLP leadless package is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly.

WLP 0402, 1mm x 0.5mm x mm

Pin Connections Top View

Input / Vc

Output / Vdd
• 1 x mm Surface Mount Package
• Ultrathin 0.25mm
• LNA Bypass function
• 5V Supply
• RoHS6 + Halogen Free

Specifications at 3GHz, Vd = Vc = 5V, 23mA Typ.
• Noise Figure 2.1dB typical
• Loss in Bypass Mode 2.3dB
• Associated Gain 14dB
• Input IP3 in Gain Mode +8dBm
• Input IP3 in Bypass Mode +21 dBm
• Input P1dB in Gain Mode 0dBm
• Input P1dB in Bypass Mode +17dBm
• Low Noise and Driver for Cellular/PCS and WCDMA Base Stations
• GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications
• & BWA systems
• WLL and MMDS Transceivers
• Radar, radio and ECM Systems

Input

Output
/ Vdd

Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model =50V ESD Human Body Model =125V Refer to Avago Application Note A004R Electrostatic Discharge, Damage and Control.

Note “C” = Device Code “Y” = Month Code

Table Absolute Maximum Ratings [1]

Parameters/Condition

Unit

Supply Voltage RF Output [2]

Bypass Control Voltage

Device Current [2]

Pin, max

CW RF Input Power RF Input [3]

Pdiss

Total Power Dissipation

Max channel temperature
Θjc

Thermal Resistance [4]
°C/W

Notes Operation in excess of any of these conditions may result in permanent damage to this device. Bias is assumed DC quiescent conditions With the DC typical bias in both modes and RF applied to the device at board temperature Tb = 25°C Thermal resistance is measured from junction to board using IR method

Absolute Max 8 6 40 +20 320 150 110

Table DC and RF Specifications TA= 25°C, Frequency = 3 GHz, Vd = 5V, Vc=5V, unless otherwise specified

Parameters/Condition

Unit

Minimum

Typ.

Device Current
Ordering Information

Part Number VMMK-2103-BLKG VMMK-2103-TR1G

Devices Per Container 100
5000

Container Antistatic Bag 7” Reel

Package Dimension Outline

A Note All dimensions are in mm

Reel Orientation

REEL

Die dimension:

Range

Unit

D - mm

E - mm

A - mm

Device Orientation

USER FEED DIRECTION 4 mm

USER FEED DIRECTION

CARRIER TAPE
•CY
•CY
•CY
•CY

TOP VIEW

Note “C” = Device Code ”Y” = Month Code
8 mm END VIEW

Tape Dimensions

Note 2

Note 1

T 5° Max

E F Note 2 W Bo Scale 5:1

B SECTION

R0.1
5° Max

Unit mm

Symbol K1 Po P1 P2 Do D1 E F 10Po W T

Scale 5:1

A SECTION

Ao = mm

Bo = mm

USnpite:cm. m 4K.10±0.10 4P.o0±0.10 2P.10±0.05 1P.255±0.05 0D.5o±0.05 1D.715±0.10 3E.50±0.05 4F0.0±0.10 81.00P±o0.20 0W.20±0.02 T

Notice:
10 Sprocket hole pitch cumulative tolerance is ±0.1mm.

Spec.

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Datasheet ID: VMMK-2103-TR2G 520527