MSA-0786-BLKG

MSA-0786-BLKG Datasheet


MSA-0786

Part Datasheet
MSA-0786-BLKG MSA-0786-BLKG MSA-0786-BLKG (pdf)
Related Parts Information
MSA-0786-TR1G MSA-0786-TR1G MSA-0786-TR1G
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MSA-0786

Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0786 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• Cascadable Gain Block
• Low Operating Voltage:

V Typical Vd
• 3 dB Bandwidth:

DC to GHz
• dB Typical Gain at GHz
• Unconditionally Stable k>1
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free Option Available
86 Plastic Package

Typical Biasing Configuration

R bias

VCC > 5 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-0786 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current
60 mA

Power Dissipation[2,3]
275 mW

RF Input Power
+13 dBm

Junction Temperature
150°C

Storage Temperature
to 150°C

Notes Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 117°C.

Thermal Resistance[2] = 120°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 22 mA, ZO = 50

Power Gain |S21| 2
f = GHz f = GHz

Gain Flatness
f = to GHz
f3 dB
3 dB Bandwidth

VSWR
Ordering Information

Part Numbers No. of Devices Comments

MSA-0786-BLK

Bulk

MSA-0786-BLKG

Bulk

MSA-0786-TR1
1000
7" Reel

MSA-0786-TR1G
1000
7" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

MSA-0786 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 22 mA

Freq.

Typical Performance, TA = 25°C
unless otherwise noted
6 Id = 15 mA
4 Id = 22 mA

Id = 40 mA 2

Gain Flat to DC

FREQUENCY GHz

Figure Typical Power Gain vs. Frequency.

Id mA
40 TC = +85°C

TC = +25°C
30 TC =

Figure Device Current vs. Voltage.
15 Id = 40 mA
9 Id = 22 mA
0 Id = 15 mA

FREQUENCY GHz

Figure Output Power at 1 dB Gain Compression vs. Frequency.

NF dB

Id = 15 mA

Id = 22 mA

Id = 40 mA

FREQUENCY GHz

Figure Noise Figure vs. Frequency.

P1 dB dBm

Gp dB
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Datasheet ID: MSA-0786-BLKG 520477