MSA-0736-BLKG

MSA-0736-BLKG Datasheet

MSA-0736

Part	Datasheet
MSA-0736-BLKG	MSA-0736-BLKG (pdf)

Related Parts	Information
MSA-0736-TR1G	MSA-0736-TR1G

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MSA-0736 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0736 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. • Cascadable Gain Block • Low Operating Voltage V Typical Vd • 3 dB Bandwidth DC to GHz • dB Typical Gain at GHz • Unconditionally Stable k>1 • Cost Effective Ceramic Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package Typical Biasing Configuration R bias VCC > 5 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-0736 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current 60 mA Power Dissipation[2,3] 275 mW RF Input Power +13 dBm Junction Temperature 150°C Storage Temperature to 150°C Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 157°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. Ths small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,5] = 155°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 22 mA, ZO = 50 Power Gain \|S21\| 2 f = GHz Gain Flatness f = to GHz f3 dB 3 dB Bandwidth VSWR Ordering Information Part Numbers No. of Devices MSA-0736-BLKG MSA-0736-TR1G 1000 Comments Bulk 7" Reel G p dB MSA-0736 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 22 mA Freq. Typical Performance, TA = 25°C unless otherwise noted Gain Flat to DC 12 FREQUENCY GHz Figure Typical Power Gain vs. Frequency, Id = 22 mA. Id mA TC = +125°C TC = +25°C 30 TC = Figure Device Current vs. Voltage. G p dB I d mA Figure Power Gain vs. Current. 14 13 P1 dB 3 +25 +85 +125 TEMPERATURE °C Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = GHz, Id = 22 mA. NF dB P1 dB dBm 15 Id = 40 mA 9 6 Id = 22 mA 0 Id = 15 mA FREQUENCY GHz Figure Output Power at 1 dB Gain Compression vs. Frequency. NF dB Id = 15 mA Id = 22 mA Id = 40 mA FREQUENCY GHz Figure Noise Figure vs. Frequency. Gp dB P1 dB dBm 36 micro-X Package Dimensions SOURCE 4 DIA.

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MSA-0736

Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0736 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
• Cascadable Gain Block
• Low Operating Voltage V Typical Vd
• 3 dB Bandwidth DC to GHz
• dB Typical Gain at GHz
• Unconditionally Stable k>1
• Cost Effective Ceramic Microstrip Package

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
36 micro-X Package

Typical Biasing Configuration

R bias

VCC > 5 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-0736 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current
60 mA

Power Dissipation[2,3]
275 mW

RF Input Power
+13 dBm

Junction Temperature
150°C

Storage Temperature
to 150°C

Notes Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 157°C. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.

Ths small spot size of this technique results in a higher, though more accurate determination of than do alternate methods.

Thermal Resistance[2,5] = 155°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 22 mA, ZO = 50

Power Gain |S21| 2
f = GHz

Gain Flatness
f = to GHz
f3 dB
3 dB Bandwidth

VSWR
Ordering Information

Part Numbers No. of Devices

MSA-0736-BLKG

MSA-0736-TR1G
1000

Comments Bulk 7" Reel

G p dB

MSA-0736 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 22 mA

Freq.

Typical Performance, TA = 25°C
unless otherwise noted

Gain Flat to DC 12

FREQUENCY GHz

Figure Typical Power Gain vs. Frequency, Id = 22 mA.

Id mA

TC = +125°C TC = +25°C 30 TC =

Figure Device Current vs. Voltage.

G p dB

I d mA

Figure Power Gain vs. Current.
14 13

P1 dB
3 +25
+85 +125

TEMPERATURE °C

Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = GHz, Id = 22 mA.

NF dB P1 dB dBm
15 Id = 40 mA
9 6 Id = 22 mA
0 Id = 15 mA

FREQUENCY GHz

Figure Output Power at 1 dB Gain Compression vs. Frequency.

NF dB

Id = 15 mA Id = 22 mA Id = 40 mA

FREQUENCY GHz

Figure Noise Figure vs. Frequency.

Gp dB

P1 dB dBm
36 micro-X Package Dimensions

SOURCE 4

DIA.

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Datasheet ID: MSA-0736-BLKG 520475