MSA-0505 Cascadable Silicon Bipolar MMIC Amplifier
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MSA-0505-TR1G (pdf) |
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MSA-0505-STRG |
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MSA-0505 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0505 is a high performance medium power silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost, surface mount package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, and reliability. The use of an external bias resistor for temperature and current stability also bias flexibility. • Cascadable 50 Ω Gain Block • High Output Power dBm Typical P1 dB at GHz • Low Distortion dBm Typical IP3 at GHz • dB Typical Gain at GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available • Lead-free Option Available 05 Plastic Package Typical Biasing Configuration R bias VCC > 12 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-0505 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] 135 mA W RF Input Power +25 dBm Junction Temperature 200°C Storage Temperature to 150°C Thermal Resistance[2]: = 85°C/W Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 73°C. Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 80 mA, ZO = 50 Ω Units Min. Typ. Max. P1 dB Output Power at 1 dB Gain Compression Power Gain |S21| 2 f = GHz f = GHz f = GHz Ordering Information Part Numbers No. of Devices Comments MSA-0505-STR Bulk MSA-0505-STRG Bulk MSA-0505-TR1 7" Reel MSA-0505-TR1G 7" Reel Note Order part number with a “G” suffix if lead-free option is desired. MSA-0505 Typical Scattering Parameters TA = 25°C, Id = 80 mA Freq. Mag Ang Mag Ang 50 100 200 400 600 800 1000 1500 2000 2500 3000 161 39 156 12 GAIN dB Typical Performance, TA = 25°C unless otherwise noted GHz 6 GHz 4 GHz 2 0 8 10 12 14 16 18 20 22 24 POWER OUT dBm Figure Typical Gain vs. Power Out, TA = 25°C, Id = 80 mA. 14 12 10 FREQUENCY GHz Figure Gain vs. Frequency, Id = 80 to 100 mA. Id mA P1 dB dBm IP3 dBm 120 TC = +85C TC = +25C 90 TC = 60 30 Figure Device Current vs. Voltage. 30 IP3 P1 dB |
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