MSA-0300-GP4

MSA-0300-GP4 Datasheet

MSA-0300 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-0300-GP4	MSA-0300-GP4 (pdf)

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MSA-0300 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0300 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride selfalignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Typical Biasing Configuration • Cascadable 50 Gain Block • 3 dB Bandwidth DC to GHz • dB Typical Gain at GHz • dBm Typical P 1 dB at GHz Chip Outline[1] C block R bias VCC > 7 V RFC Optional C block Vd = 5 V Note This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. MSA-0300 Absolute Maximum Ratings Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum [1] 80 mA 425 mW +13 dBm 2 0 -65 to 200 Thermal Resistance [2,4] = 45 Notes Permanent damage may occur if any of these limits are exceeded. TMounting Surface TMS = 25°C. Derate at mW/°C for TC > 181°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP P f3 dB VSWR NF P 1 dB IP 3 tD Vd dV/dT Parameters and Test Conditions [2] I d = 35 mA, Z O = 50 PowerGain \|S 21 \| 2 f = GHz Gain Flatness f = to GHz 3 dB Bandwidth Input VSWR f = to GHz Output VSWR f = to GHz 50 Noise Figure f = GHz Output Power at 1 dB Gain Compression f = GHz Part Number Ordering Information Part Number MSA-0300-GP4 Devices Per Tray 100 MSA-0300 Typical Scattering Parameters[1] ZO = 50 TA = 25°C, Id = 35 mA Freq. dB Mag A n g dB Mag A n g Mag A n g -179 -179 -179 -177 -172 152 11 -166 -145 -104 -140 -122 -141 -133 -149 82 24 -145 -157 67 21 -148 -164 55 22 -146 35 17 -134 18 14 -137 Note S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. P1 dB dBm G p dB G p dB Typical Performance, TA = 25°C unless otherwise noted 12 Gain Flat to DC 10 8 FREQUENCY GHz

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MSA-0300 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0300 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.

The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride selfalignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using mil gold wire.[1] See APPLICATIONS section, “Chip Use”.

Typical Biasing Configuration
• Cascadable 50 Gain Block
• 3 dB Bandwidth DC to GHz
• dB Typical Gain at GHz
• dBm Typical P 1 dB at GHz

Chip Outline[1]

C block

R bias

VCC > 7 V

RFC Optional

C block Vd = 5 V

Note This chip contains additional biasing options. The performance
specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.

MSA-0300 Absolute Maximum Ratings

Parameter

Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature

Absolute Maximum [1]
80 mA 425 mW +13 dBm 2 0 -65 to 200

Thermal Resistance [2,4] = 45

Notes Permanent damage may occur if any of these limits are exceeded. TMounting Surface TMS = 25°C. Derate at mW/°C for TC > 181°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods.

See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications[1], TA = 25°C

Symbol GP P f3 dB

VSWR

NF P 1 dB IP 3 tD Vd dV/dT

Parameters and Test Conditions [2] I d = 35 mA, Z O = 50

PowerGain |S 21 | 2
f = GHz

Gain Flatness
f = to GHz
3 dB Bandwidth

Input VSWR
f = to GHz

Output VSWR
f = to GHz
50 Noise Figure
f = GHz

Output Power at 1 dB Gain Compression
f = GHz
Part Number Ordering Information

Part Number MSA-0300-GP4

Devices Per Tray 100

MSA-0300 Typical Scattering Parameters[1] ZO = 50 TA = 25°C, Id = 35 mA

Freq.
dB Mag A n g
dB Mag A n g

Mag A n g
-179
-179
-179
-177
-172
152 11
-166
-145
-104
-140
-122
-141
-133
-149
82 24
-145
-157
67 21
-148
-164
55 22
-146
35 17
-134
18 14
-137

Note S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.

P1 dB dBm

G p dB G p dB

Typical Performance, TA = 25°C
unless otherwise noted
12 Gain Flat to DC 10 8

FREQUENCY GHz

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Datasheet ID: MSA-0300-GP4 520457