MSA-0236
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MSA-0236-TR1G (pdf) |
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MSA-0236-BLKG |
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MSA-0236 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0236 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. • Cascadable 50 Gain Block • 3 dB Bandwidth DC to GHz • dB Typical Gain at GHz • Unconditionally Stable k>1 • Cost Effective Ceramic Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package Typical Biasing Configuration R bias VCC > 7 V C block IN 3 1 MSA RFC Optional C block Vd = 5 V MSA-0236 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] 60 mA 325 mW +13 dBm 150°C to 150°C Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 153°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,5] = 145°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 25 mA, ZO = 50 Power Gain |S21| 2 f = GHz Gain Flatness f = to GHz f3 dB 3 dB Bandwidth VSWR Input VSWR Output VSWR f = to GHz f = to GHz 50 Noise Figure f = GHz P1 dB Output Power at 1 dB Gain Compression f = GHz Third Order Intercept Point f = GHz Ordering Information Part Numbers No. of Devices MSA-0236-BLKG MSA-0236-TR1G 1000 Comments Bulk 7" Reel G p dB MSA-0236 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 25 mA Freq. Typical Performance, 25°C unless otherwise noted 12 Gain Flat to DC FREQUENCY GHz Figure Typical Power Gain vs. Frequency, TA = 25°C, Id = 25 mA. P1 dB 5 +125 TEMPERATURE °C Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = GHz, Id = 25 mA. NF dB P1 dB dBm Id mA 40 TC = +125°C TC = +25°C 30 TC = Figure Device Current vs. Voltage. G p dB 4 15 20 25 30 35 40 I d mA Figure Power Gain vs. Current. 12 10 Id = 40 mA 4 Id = 25 mA 0 Id = 18 mA FREQUENCY GHz Figure Output Power at 1 dB Gain Compression vs. Frequency. NF dB Id = 18 mA Id = 25 mA Id = 40 mA FREQUENCY GHz Figure Noise Figure vs. Frequency. Gp dB |
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