MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function
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MGA-635T6-TR1G (pdf) |
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MGA-635T6-BLKG |
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MGA-635T6-TR2G |
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MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Avago Technologies’ MGA-635T6 is a LNA designed for GPS/ISM/Wimax applications in the 0.9-2.4 GHz frequency range. The LNA uses Avago Technologies’s proprietary GaAs Enhancement-mode pHEMT process to achieve high gain operation with very low noise figures and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed parameters. A CMOS compatible shutdown pin is included to turn the LNA off and provide a variable bias. The MGA-635T6 LNA is useable down to 1V operation. It achieves low noise figures and high gain even at 1V, making it suitable for use in critical low power GPS/ISM band applications. Component Image Surface Mount 2.0x1.3x0.4 mm3 6-lead UTSLP 3FYM Top View Bottom View Note Package marking provides orientation and identification “3F” = Product Code “Y” = Year of manufacture “M” = Month of manufacture Attention Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40 V ESD Human Body Model = 250 V Refer to Avago Technologies Application Note A004R Electrostatic Discharge, Damage and Control. • Low Noise Figure 0.74dB • High Gain 14.5dB • High linearity and P1dB • GaAs E-pHEMT Technology • Low component count • Wide Supply Voltage 1V to 3.6V • Shutdown current < 0.1uA • CMOS compatible shutdown pin VSD current 2.85V 60uA • Adjustable bias current via one single external resistor/voltage • Shutdown function • Small Footprint 2 x 1.3mm2 • Low Profile mm • Ext matching for non-GPS freq band operation Specifications At 1.575GHz, 2.85V 6.3mA Typ Gain = dB Typ NF = dB Typ IIP3 = dBm Typ IP1dB = dBm Typ S11 = -8 dB Typ S22 = dB Typ At 1.575GHz, 2.85V 8mA Typ Gain = dB Typ NF = dB Typ IIP3 = dBm Typ IP1dB = 1 dBm Typ S11 = dB Typ S22 = dB Typ • GPS, ISM & WiMax Bands LNA Absolute Maximum Rating [1] TA=25C Thermal Resistance [3] Vdd = 2.85V, Ids = 4.9mA , = 73 C/W Parameter Units Device Drain to Source Voltage [2] Drain Current [2] Pin,max Pdiss CW RF Input Power Vdd = 2.85V, Ids=4.9mA Total Power Dissipation [4] dBm mW Junction Temperature TSTG Storage Temperature Operation of this device in excess of any of these limits may cause permanent damage. Assuming DC quiescent conditions Thermal resistance measured using Infra-Red measurement technique. Board module belly temperature TB is 25 C. Derate 14mW/ C for TB>146 C. Absolute Max. 15 +10 54 150 -65 to 150 Electrical Specifications TA = 25 °C, DC bias for RF parameters is Vdd = Vsd = +2.85V , measured on demo board see Fig. 4 unless otherwise specified. VDD= VSD = +2.85V, R1 = 22K Ohm, Freq=1.575GHz Typical Performance[7] Table Performance table at nominal operating conditions Symbol G NF IP1dB IIP3[8] S11 S22 Ids Ish Vds IP1dB1710M IIP3OUT Parameter and Test Condition Gain Noise Figure Input 1dB Compressed Power Input 3rd Order Intercept Point 2-tone Fc +/- 2.5MHz Input Return Loss Output Return Loss Supply Current Shutdown Current VSD = 0V Supply Voltage Out of Band IP1dB DCS 1710MHz blocking Out of Band IIP3 DCS 1775MHz & 1950MHz Part Number Ordering Information Part Number MGA-635T6-BLKG MGA-635T6-TR1G MGA-635T6-TR2G No. of Devices 100 3000 10000 Container Antistatic bag 7” Reel 13” Reel ± Ko ± Bo 45° MAX. Reel Dimensions FRONT BACK SEE DETAIL “X” RECYCLE LOGO R10.65 R5.2 Slot hole 'b' FRONT VIEW 65° 45° FRONT BACK 60° Slot hole 'a' EMBOSSED RIBS RAISED 0.25mm, WIDTH 1.25mm MAX. BACK VIEW For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0188EN AV02-0215EN - March 2, 2012 |
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