HSCH-5340

HSCH-5340 Datasheet


HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors 1-26 GHz

Part Datasheet
HSCH-5340 HSCH-5340 HSCH-5340 (pdf)
Related Parts Information
HSCH-5330 HSCH-5330 HSCH-5330
HSCH-5332 HSCH-5332 HSCH-5332
HSCH-5312 HSCH-5312 HSCH-5312
HSCH-5331 HSCH-5331 HSCH-5331
HSCH-5314 HSCH-5314 HSCH-5314
HSCH-5310 HSCH-5310 HSCH-5310
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HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors 1-26 GHz

Data Sheet

Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

The Avago beam lead process allows for large beam anchor pads for rugged construction typical 6 gram pull strength without degrading capacitance.

Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band.
• Platinum tri-metal system High temperature stability
• Silicon nitride passivation Stable, reliable performance
• Low noise figure Guaranteed dB at 26 GHz
• High uniformity Tightly controlled process insures uniform RF characteristics
• Rugged construction 4 grams minimum lead pull
• Low capacitance pF max. at 0 V
• Polyimide scratch protection

The basic medium barrier devices in this family are DC tested HSCH-5310 and Equivalent low barrier devices are HSCH-5330 and Batch matched versions are available as HSCH-5331.

The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at dB maximum noise figure at 16 GHz.

Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling and Bonding of Beam Lead Devices Made Easy, or Application Note 993, Beam Lead Device Bonding to Soft Substances.

Outline 07
130 5 100 4

CATHODE GOLD LEADS
225 9 200 8
310 12 250 10
225 9 170 7
135 5 90 3
135 5 90 3
30 MIN 1
8 Min.

SILICON
710 28 670 26

GLASS
60 2 40 1

DIMENSIONS IN µm 1/1000 inch

Maximum Ratings

Pulse Power Incident at TA = 25°C 1 W Pulse Width = 1 ms, Du =

CW Power Dissipation at TA = 25°C 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature

TOPR Operating Temperature Range -65°C to +175 °C TSTG Storage Temperature Range -65°C to +200°C Minimum Lead Strength 4 grams pull on any lead Diode Mounting Temperature +350°C for 10 sec. max.

These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.

Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C

Part Number HSCH-
5314

Barrier Medium

Max. Noise Figure NF dB
at 16 GHz
More datasheets: 5977721207 | FQPF7N20L | FIT0432 | 2984 | MS-105A01 (H) | 2107 | 1759 | 3688 | 702 | HSCH-5330


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Datasheet ID: HSCH-5340 520391