ATF-52189-TR2

ATF-52189-TR2 Datasheet

ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package

Part	Datasheet
ATF-52189-TR2	ATF-52189-TR2 (pdf)

Related Parts	Information
ATF-52189-TR1	ATF-52189-TR1
ATF-52189-BLK	ATF-52189-BLK

PDF Datasheet Preview
ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a medium-power, high-linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz. ATF-52189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested. Notes Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. Refer to reliability datasheet for detailed MTTF data Conform to JEDEC reference outline MO229 for DRP-N Linearity Figure of Merit LFOM is OIP3 divided by DC bias power Pin Connections and Package Marking #1 #2 RFin GND RFout RFout GND RFin Top View Bottom View Notes Package marking provides orientation and identification “2G” = Device Code “x” = Month code indicates the month of manufacture. • Single voltage operation • High Linearity and P1dB • Low Noise Figure • Excellent uniformity in product specifications • SOT 89 standard package • Point MTTF > 300 years[2] • MSL-2 and lead-free • Tape-and-Reel packaging option available Specifications 2 GH, 4.5V, 280 mA Typ. • 42 dBm Output IP3 • 27 dBm Output Power at 1dB gain compression • dB Noise Figure • dB Gain • 55% PAE at P1dB • LFOM[3] dB • Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure • Driver Amplifier for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications ATF-52189 Absolute Maximum Ratings[1] Vds Vgs Vgd Ids Igs Pdiss Pin max. Tch Tstg Parameter Voltage[2] Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature Units V mA W dBm °C °C Absolute Maximum 7 -5 to -5 to 500 46 +27 150 -65 to 150 Thermal Resistance[2,4] = 52°C/W Notes Operation of this device above any one of these parameters may cause permanent damage. Assuming DC quiescent conditions. Board package belly temperature TB is 25°C. Derate mW/°C for TB > 72°C. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. ATF-52189 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. Symbol Parameters and Test Conditions Units Min. Typ. Vgs Vth Ids Gm Igss NF G OIP3 P1dB PAE NF OIP3 P1dB Operational Gate Voltage Threshold Voltage Drain to Source Current Transconductance Gate Leakage Current Noise Figure Gain [1] Output 3rd Order Intercept Point[1] Output 1dB Compressed[1] Power Added Efficiency Noise Figure Part Number Ordering Information No of devices ATF-52189-BLKG ATF-52189-TR1G 3000 Container 7” Tape/Reel 13” Tape/Reel SOT89 Package Dimensions POLISH HALF ETCHING MATTE FINISH DEPTH POLISH Symbols A L b b1 C D D1 D2 E E1 S e Dimensions in mm Minimum Nominal Maximum Dimensions in inches Minimum Nominal Maximum Device Orientation REEL USER FEED DIRECTION COVER TAPE CARRIER TAPE Tape Dimensions ± R MAX. ± SEE NOTE 3 SEE NOTE 1 Ko SECTION A - A Ao = Bo = Ko = Ø Ø MIN. A A R TYP. DIMENSIONS IN MM NOTES 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE CAMBER IN COMPLIANCE WITH EIA 481 POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE ± SEE NOTE 3 Reel Dimensions 13” Reel LOKREEL R MINNEAPOLIS USA U.S PAT 4726534 ATTENTION Electrostatic Sensitive Devices Safe Handling Required 88 REF Detail "B" Detail "A" MEASURED AT HUB MEASURED AT HUB

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ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package

Data Sheet

Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a medium-power, high-linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz.

ATF-52189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested.

Notes Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with conventional depletion mode devices. Refer to reliability datasheet for detailed MTTF data Conform to JEDEC reference outline MO229 for DRP-N Linearity Figure of Merit LFOM is OIP3 divided by DC bias power

Pin Connections and Package Marking
#1 #2

RFin GND RFout

RFout GND RFin

Top View

Bottom View

Notes Package marking provides orientation and identification “2G” = Device Code “x” = Month code indicates the month of manufacture.
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• SOT 89 standard package
• Point MTTF > 300 years[2]
• MSL-2 and lead-free
• Tape-and-Reel packaging option available

Specifications
2 GH, 4.5V, 280 mA Typ.
• 42 dBm Output IP3
• 27 dBm Output Power at 1dB gain compression
• dB Noise Figure
• dB Gain
• 55% PAE at P1dB
• LFOM[3] dB
• Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications

ATF-52189 Absolute Maximum Ratings[1]

Vds Vgs Vgd Ids Igs Pdiss Pin max. Tch Tstg

Parameter

Voltage[2] Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature

Units

V mA W dBm °C °C

Absolute Maximum
7 -5 to -5 to 500 46 +27 150 -65 to 150

Thermal Resistance[2,4] = 52°C/W

Notes Operation of this device above any one of
these parameters may cause permanent damage. Assuming DC quiescent conditions. Board package belly temperature TB is 25°C. Derate mW/°C for TB > 72°C. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.

ATF-52189 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.

Symbol Parameters and Test Conditions

Units

Min.

Typ.

Vgs Vth Ids Gm

Igss NF G OIP3 P1dB PAE NF

OIP3

P1dB

Operational Gate Voltage Threshold Voltage Drain to Source Current Transconductance

Gate Leakage Current Noise Figure Gain [1] Output 3rd Order Intercept Point[1] Output 1dB Compressed[1] Power Added Efficiency Noise Figure
Part Number Ordering Information

No of devices

ATF-52189-BLKG

ATF-52189-TR1G
3000

Container 7” Tape/Reel 13” Tape/Reel

SOT89 Package Dimensions

POLISH

HALF ETCHING

MATTE FINISH

DEPTH

POLISH

Symbols A L b b1 C D D1 D2 E E1 S e

Dimensions in mm

Minimum Nominal Maximum

Dimensions in inches

Minimum Nominal Maximum

Device Orientation

REEL

USER FEED DIRECTION

COVER TAPE

CARRIER TAPE

Tape Dimensions
± R MAX.
± SEE NOTE 3 SEE NOTE 1

Ko SECTION A - A

Ao = Bo = Ko =
Ø Ø MIN. A

A R TYP.

DIMENSIONS IN MM NOTES 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE CAMBER IN COMPLIANCE WITH EIA 481 POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED

AS TRUE POSITION OF POCKET, NOT POCKET HOLE
± SEE NOTE 3

Reel Dimensions 13” Reel

LOKREEL R

MINNEAPOLIS USA U.S PAT 4726534

ATTENTION Electrostatic Sensitive Devices

Safe Handling Required
88 REF

Detail "B"

Detail "A"

MEASURED AT HUB MEASURED AT HUB

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Datasheet ID: ATF-52189-TR2 520196