ATF-36077-STR

ATF-36077-STR Datasheet


ATF-36077 GHz Ultra Low Noise Pseudomorphic HEMT

Part Datasheet
ATF-36077-STR ATF-36077-STR ATF-36077-STR (pdf)
Related Parts Information
ATF-36077-TR1 ATF-36077-TR1 ATF-36077-TR1
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ATF-36077 GHz Ultra Low Noise Pseudomorphic HEMT

Data Sheet
morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of dB, or typical 4 GHz noise figures of dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input match, making the design of broadband low noise much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broad-cast Satellite DBS Television systems, C-band Television Receive Only TVRO LNAs, or other low noise amplifiers operating in the GHz frequency range.
77 Package
• PHEMT Technology
• Ultra-Low Noise Figure:
dB Typical at 12 GHz dB Typical at 4 GHz
• High Associated Gain 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz
• Low Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
• 12 GHz DBS LNB Low Noise Block
• 4 GHz TVRO LNB Low Noise Block
• Ultra-Sensitive Low Noise Amplifiers

NOISE FIGURE dB ASSOCIATED GAIN dB

Pin Configuration
4 SOURCE

GATE

DRAIN
2 SOURCE

NF[1]
12 16 20

FREQUENCY GHz

Figure ATF-36077 Optimum Noise Figure and Associated Gain vs. Frequency for VDS = ID = 10 mA.

ATF-36077 fig 1

This GaAs PHEMT device has a nominal micron gate length with a total gate periphery width of 200 microns. Proven gold based metalization systems and nitride passivation assure rugged, reliable devices.

Note See Noise Parameter Table.

ATF-36077 Absolute Maximum Ratings

Symbol     Parameter

Units

Drain Source Voltage

Gate Source Voltage

VGD ID PT Pin max Tch TSTG

Gate-Drain Voltage Drain Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature

V mA mW dBm °C °C

Absolute Maximum[1]
+3 -3

Idss 180 +10 150 -65 to 150

Thermal Resistance[2,3] = 60°C/W

Notes Operation of this device above any one of
these parameters may cause permanent damage. Measured at Pdiss = 15 mW and Derate at mW/°C for TC > 139°C.

ATF-36077 Electrical Specifications, TC = 25°C, ZO = 50 Vds = V, Ids = 10 mA, unless otherwise noted .

Parameters and Test Conditions

Noise Figure[1]
f = GHz

Gain at NF[1]
f = GHz

Transconductance
Part Number Ordering Information

Part Number ATF-36077-TRl[2] ATF-36077-STR

No. of Devices 1000 100

Container 7" Reel strip

Note For more information, see “Tape and Reel Packaging for Semiconduc-
tor Devices,” in “Communications Components” Designer‘s Catalog.

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E AV02-1222EN - April 29, 2008
More datasheets: CS-CHIBITRONICS-03 | CS-CHIBITRONICS-04 | CS-CHIBITRONICS-02 | CS-CHIBITRONICS-01 | CS-CHIBITRONICS-08 | CS-CHIBITRONICS-11 | CS-CHIBITRONICS-05 | CS-CHIBITRONICS-09 | 383-2USOC/S400-A6 | ATF-36077-TR1


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Datasheet ID: ATF-36077-STR 520194