AT-64023

AT-64023 Datasheet

AT-64023

Part	Datasheet
AT-64023	AT-64023 (pdf)

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AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 230 mil BeO Package • High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz • High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz • 35% Total Efficiency • Emitter Ballast Resistors • Hermetic, Metal/Beryllia Stripline Package Ground Input Output AT-64023 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V mA W °C °C Absolute Maximum[1] 40 20 200 3 200 -65 to 200 Thermal Resistance [2,4]: = 40°C/W Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at 25 mW/°C for Tc > 80°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. \|S21E\|2 Insertion Power Gain VCE = 16 V, IC = 110 mA f = GHz dB f = GHz P1 dB Power Output 1 dB Gain Compression VCE = 16 V, IC = 110 mA f = GHz dBm f= GHz G1 dB 1 dB Compressed Gain VCE = 16 V, IC = 110 mA f = GHz dB f = GHz Total Efficiency[1] at 1 dB Compression: f = GHz % VCE = 16 V, IC = 110 mA Ordering Information Part Number AT-64023 No. of Devices 10 230 mil BeO Package Dimensions ± ± ± ± ± ± 3 Notes unless otherwise specified Dimensions are in Tolerances mm in .xxx = mm .xx = For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-2658EN AV02-1221EN - November 24, 2008

PDF Datasheet Preview

AT-64023

Up to 4 GHz Linear Power Silicon Bipolar Transistor

Data Sheet

The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers.
230 mil BeO Package
• High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz
• High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Stripline Package

Ground

Input

Output

AT-64023 Absolute Maximum Ratings

Symbol VEBO VCBO VCEO IC PT Tj TSTG

Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature

Units V mA W °C °C

Absolute Maximum[1] 40 20 200 3 200 -65 to 200

Thermal Resistance [2,4]:
= 40°C/W

Notes Permanent damage may occur if any
of these limits are exceeded.

Tcase = 25°C. Derate at 25 mW/°C for Tc > 80°C. The small spot size of this technique
results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Symbol Parameters and Test Conditions

Units Min. Typ.
|S21E|2 Insertion Power Gain VCE = 16 V, IC = 110 mA
f = GHz dB
f = GHz

P1 dB

Power Output 1 dB Gain Compression VCE = 16 V, IC = 110 mA
f = GHz dBm
f= GHz

G1 dB
1 dB Compressed Gain VCE = 16 V, IC = 110 mA
f = GHz dB f = GHz

Total Efficiency[1] at 1 dB Compression:
f = GHz %

VCE = 16 V, IC = 110 mA
Ordering Information Part Number

AT-64023

No. of Devices 10
230 mil BeO Package Dimensions
± ±
± ±
± ±
3 Notes unless otherwise specified Dimensions are in Tolerances mm
in .xxx = mm .xx =

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-2658EN AV02-1221EN - November 24, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-64023 Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-64023 520193