AT-42070

AT-42070 Datasheet


AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor

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AT-42070 AT-42070 AT-42070 (pdf)
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AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Data Sheet

Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high performance. The is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
• High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz
• High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz
• Low Noise Figure dB Typical NFO at GHz
• High Gain-Bandwidth Product GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package

The AT-42070 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the of this device.
70 mil Package

AT-42070 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO

Emitter-Base Voltage

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

Junction Temperature
°C 200

TSTG

Storage Temperature
-65 to 200

Thermal Resistance [2,4]:
= 150°C/W

Notes Permanent damage may occur if any of
these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 110°C. The small spot size of this technique
results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Parameters and Test Conditions[1]
|S21E| 2

Insertion Power Gain VCE = 8 V, IC = 35 mA

Units Min. Typ. Max.
f = GHz
f = GHz

P1 dB

Power Output 1 dB Gain Compression
Ordering Information

Part Number AT-42070

No. of Devices 100
70 mil Package Dimensions

EMITTER

BASE

COLLECTOR
± ±
2 EMITTER
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2654EN AV02-1218EN May 5, 2008
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Datasheet ID: AT-42070 520187