AT-42036-TR1G

AT-42036-TR1G Datasheet

AT-42036 Up to 6 GHz Medium Power Silicon Transistor

Part	Datasheet
AT-42036-TR1G	AT-42036-TR1G (pdf)

Related Parts	Information
AT-42036-BLKG	AT-42036-BLKG

PDF Datasheet Preview
AT-42036 Up to 6 GHz Medium Power Silicon Transistor Data Sheet Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42036 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of this device. • High output power dBm typical P1 dB at GHz dBm typical P1 dB at GHz • High gain at 1 dB compression dB typical G1 dB at GHz dB typical G1 dB at GHz • Low noise figure dB typical NFO at GHz • High gain-bandwidth product GHz typical fT • Cost effective ceramic microstrip package 36 micro-X Package AT-42036 Absolute Maximum Ratings[1] Parameter Units VEBO Emitter-Base Voltage VCBO VCEO IC PT Tj TSTG Collector-Base Voltage Collector-Emitter Voltage V Collector Current Power Dissipation[2,3] Junction Temperature Storage Temperature[4] Absolute Maximum 20 12 80 600 150 -65 to 150 Thermal Resistance[2,5]: jc = 175°C/W Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 95°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications TA = 25°C Parameters and Test Conditions[1] Frequency Units Min. Typ. Max. \|S21E\|2 Insertion Power Gain VCE = 8 V, IC = 35 mA f = GHz f = GHz P1 dB Power Output 1 dB Gain Compression f = GHz VCE = 8 V, IC = 35 mA Ordering Information Part Numbers No. of Devices AT-42036-BLKG AT-42036-TR1G 1000 Device Orientation TOP VIEW 1 INDICATES PIN 1 ORIENTATION. Tape Dimensions COVER TAPE Comments Bulk 7" Reel 12 mm 36 micro-X Package Dimensions EMITTER 4 DIA. COLLECTOR BASE 1 EMITTER 2 Notes Dimensions are in millimeters inches Tolerances in .xxx = mm .xx = 10 PITCHES CUMULATIVE TOLERANCE ON TAPE MM F W USER FEED DIRECTION SYMBOL SIZE mm SIZE INCHES CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER D1 min. min. PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE

PDF Datasheet Preview

AT-42036 Up to 6 GHz Medium Power Silicon Transistor

Data Sheet

Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-42036 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of this device.
• High output power dBm typical P1 dB at GHz dBm typical P1 dB at GHz
• High gain at 1 dB compression dB typical G1 dB at GHz dB typical G1 dB at GHz
• Low noise figure dB typical NFO at GHz
• High gain-bandwidth product GHz typical fT
• Cost effective ceramic microstrip package
36 micro-X Package

AT-42036 Absolute Maximum Ratings[1]

Parameter

Units

VEBO

Emitter-Base Voltage

VCBO VCEO IC PT Tj TSTG

Collector-Base Voltage

Collector-Emitter Voltage V

Collector Current

Power Dissipation[2,3]

Junction Temperature

Storage Temperature[4]

Absolute Maximum 20 12 80 600 150 -65 to 150

Thermal Resistance[2,5]:
jc = 175°C/W

Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 95°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into
a circuit. The small spot size of this technique results in a higher, though more accurate determination
of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications

TA = 25°C

Parameters and Test Conditions[1]

Frequency

Units

Min.

Typ.

Max.
|S21E|2

Insertion Power Gain VCE = 8 V, IC = 35 mA f = GHz
f = GHz

P1 dB

Power Output 1 dB Gain Compression f = GHz

VCE = 8 V, IC = 35 mA
Ordering Information

Part Numbers

No. of Devices

AT-42036-BLKG

AT-42036-TR1G
1000

Device Orientation

TOP VIEW
1 INDICATES PIN 1 ORIENTATION.

Tape Dimensions

COVER

TAPE

Comments Bulk
7" Reel
12 mm
36 micro-X Package Dimensions

EMITTER 4

DIA.

COLLECTOR

BASE 1

EMITTER 2

Notes Dimensions are in millimeters inches Tolerances in .xxx =
mm .xx =
10 PITCHES CUMULATIVE TOLERANCE ON TAPE MM

F W USER FEED DIRECTION

SYMBOL SIZE mm

SIZE INCHES

CAVITY

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER D1
min.
min.

PERFORATION

DIAMETER PITCH POSITION

CARRIER TAPE WIDTH THICKNESS

COVER TAPE WIDTH

TAPE THICKNESS

DISTANCE

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Datasheet ID: AT-42036-TR1G 520186