AT-42010

AT-42010 Datasheet

AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Part	Datasheet
AT-42010	AT-42010 (pdf)

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AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is for use in low noise, wideband amplifier, mixer and in the VHF, UHF, and An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. • High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz • High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz • Low Noise Figure dB Typical NFO at GHz • High Gain-Bandwidth Product GHz Typical fT • Hermetic Gold-ceramic Microstrip Package The AT-42010 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface Excellent device uniformity, performance and are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the of this device. 100 mil Package IFD-53010 pkg AT-42010 Absolute Maximum Ratings[1] Parameter Units Absolute Maximum VEBO Emitter-Base Voltage VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature °C 200 TSTG Storage Temperature -65 to 200 Thermal Resistance [2,4]: = 150°C/W Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 110°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Parameters and Test Conditions[1] Units Min. Typ. Max. \|S21E\| 2 Insertion Power Gain VCE = 8 V, IC = 35 mA Ordering Information Part Number AT-42010 No. of Devices 100 100 mil Package Dimensions EMITTER BASE COLLECTOR ± ± 2 EMITTER unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0022EN AV02-1217EN April 29, 2008

PDF Datasheet Preview

AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Data Sheet

Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is for use in low noise, wideband amplifier, mixer and in the VHF, UHF, and An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
• High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz
• High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz
• Low Noise Figure dB Typical NFO at GHz
• High Gain-Bandwidth Product GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package

The AT-42010 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface Excellent device uniformity, performance and are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the of this device.
100 mil Package

IFD-53010 pkg

AT-42010 Absolute Maximum Ratings[1]

Parameter

Units

Absolute Maximum

VEBO

Emitter-Base Voltage

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

Junction Temperature
°C 200

TSTG

Storage Temperature
-65 to 200

Thermal Resistance [2,4]:
= 150°C/W

Notes Permanent damage may occur if any of
these limits are exceeded. Tcase = 25°C. Derate at mW/°C for Tc > 110°C. The small spot size of this technique results
in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.
|S21E| 2

Insertion Power Gain VCE = 8 V, IC = 35 mA
Ordering Information

Part Number AT-42010

No. of Devices 100
100 mil Package Dimensions

EMITTER

BASE

COLLECTOR
± ±
2 EMITTER
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0022EN AV02-1217EN April 29, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-42010 Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-42010 520184