AT-42000-GP4

AT-42000-GP4 Datasheet

AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Part	Datasheet
AT-42000-GP4	AT-42000-GP4 (pdf)

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AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50W up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42000 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using mil gold wire. See APPLICATIONS section, “Chip Use”. • High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz • High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz • Low Noise Figure dB Typical NFO at GHz • High Gain-Bandwidth Product GHz Typical fT Chip Outline CAUTION It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. AT-42000 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V mA mW °C °C Absolute Maximum [1] 20 12 80 600 200 -65 to 200 Part Number Ordering Information Part Number AT-42000-GP4 Devices Per Tray 100 Thermal Resistanc e[2,4] jc = 70°C/W Notes Permanent damage may occur if any of these limits are exceeded. TMounting Surface = 25°C. Derate at mW°/C for TMounting Surface > 158°C. The small spot size of this tech- nique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section ÒThermal for more information. Electrical Specifications, TA = 25 °C Parameters and Test Conditions \|S21E\|2 Insertion Power Gain VCE = 8 V, IC = 35 mA Units Min. f = GHz dB f = GHz P1 dB G1 dB Power Output 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain VCE = 8 V, IC = 35 mA f = GHz f= GHz f = GHz f = GHz dBm dB NFO Optimum Noise Figure VCE = 8 V, IC = 10 mA Gain NFO VCE = 8 V, IC = 10 mA f = GHz dB f = GHz f = GHz dB f = GHz Gain Bandwidth Product VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio VCE = 8 V, IC = 35 mA ICBO Collector Cutoff Current V CB = 8 V IEBO Emitter Cutoff Current V EB = 1 V Collector Base Capacitance[2] VCB = 8 V, f = 1 MHz mA pF Notes RF performance is determined by packaging and testing 10 devices per wafer. For this test, the emitter is grounded. Typ. Max. 150 270 P1 dB dBm G1 dB AT-42000 Typical Performance, TA = 25 °C P1 dB dBm 20 16 P1dB 12 20 16 P1 d B 12 G1 dB

PDF Datasheet Preview

AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Data Sheet

Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.

This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50W up to 1 GHz , makes this device easy to use as a low noise amplifier.

The AT-42000 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.

The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using mil gold wire. See APPLICATIONS section, “Chip Use”.
• High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz
• High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz
• Low Noise Figure dB Typical NFO at GHz
• High Gain-Bandwidth Product GHz Typical fT

Chip Outline

CAUTION It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

AT-42000 Absolute Maximum Ratings

Symbol VEBO VCBO VCEO IC PT Tj TSTG

Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature

Units V mA
mW °C °C

Absolute Maximum [1]
20 12 80 600 200 -65 to 200
Part Number Ordering Information

Part Number AT-42000-GP4

Devices Per Tray 100

Thermal Resistanc e[2,4] jc = 70°C/W

Notes Permanent damage may occur if
any of these limits are exceeded.

TMounting Surface = 25°C. Derate at mW°/C for

TMounting Surface > 158°C. The small spot size of this tech-
nique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section ÒThermal for more information.

Electrical Specifications, TA = 25 °C

Parameters and Test Conditions
|S21E|2 Insertion Power Gain VCE = 8 V, IC = 35 mA

Units Min.
f = GHz dB f = GHz

P1 dB G1 dB

Power Output 1 dB Gain Compression VCE = 8 V, IC = 35 mA
1 dB Compressed Gain VCE = 8 V, IC = 35 mA
f = GHz f= GHz
f = GHz f = GHz
dBm dB

NFO Optimum Noise Figure VCE = 8 V, IC = 10 mA

Gain NFO VCE = 8 V, IC = 10 mA
f = GHz dB f = GHz
f = GHz dB f = GHz

Gain Bandwidth Product VCE = 8 V, IC = 35 mA

Forward Current Transfer Ratio VCE = 8 V, IC = 35 mA

ICBO Collector Cutoff Current V CB = 8 V

IEBO Emitter Cutoff Current V EB = 1 V

Collector Base Capacitance[2] VCB = 8 V, f = 1 MHz
mA pF

Notes RF performance is determined by packaging and testing 10 devices per wafer. For this test, the emitter is grounded.

Typ. Max.
150 270

P1 dB dBm

G1 dB

AT-42000 Typical Performance, TA = 25 °C

P1 dB dBm
20 16 P1dB 12
20 16

P1 d B 12

G1 dB

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Datasheet ID: AT-42000-GP4 520183