AT-41486-BLKG

AT-41486-BLKG Datasheet

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Part	Datasheet
AT-41486-BLKG	AT-41486-BLKG (pdf)

Related Parts	Information
AT-41486-TR1G	AT-41486-TR1G
AT-41486-TR2G	AT-41486-TR2G

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AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Avago’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount diameter plastic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41486 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. • Low Noise Figure dB Typical at GHz dB Typical at GHz • High Associated Gain dB Typical at GHz dB Typical at GHz • High Gain-Bandwidth Product GHz Typical fT • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available • Lead-free Option Available 86 Plastic Package Pin Connections EMITTER 4 BASE 1 2 EMITTER COLLECTOR 3 AT-41486 Absolute Maximum Ratings VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Units Maximum[1] -65 to 150 Ordering Information Part Numbers AT-41486-BLK AT-41486-BLKG AT-41486-TR1 AT-41486-TR1G AT-41486-TR2 AT-41486-TR2G No. of Devices 100 1000 4000 Comments Bulk 7" Reel 7" Reel 13" Reel 13" Reel Note Order part number with a “G” suffix if lead-free option is desired. Thermal Resistance[2,4] = 165°C/W Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at 6 mW/°C for TC > 68°C. See MEASUREMENTS section “Thermal Re- sistance” for more information. Electrical Specifications, TA = 25°C Parameters and Test Conditions \|S21E\| 2 Insertion Power Gain VCE = 8 V, IC = 25 mA P1 dB Power Output 1 dB Gain Compression VCE = 8 V, IC = 25 mA G1 dB 1 dB Compressed Gain VCE = 8 V, IC = 25 mA Optimum Noise Figure VCE = 8 V, IC = 10 mA Gain NFO VCE = 8 V, IC = 10 mA Gain Bandwidth Product VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio VCE = 8 V, IC = 10 mA ICBO Collector Cutoff Current VCB = 8 V IEBO Emitter Cutoff Current VEB = 1 V Collector Base Capacitance[1] VCB = 8 V, f = 1 MHz Note For this test, the emitter is grounded. f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz Units Min. Typ. Max. 30 150 270 GAIN dB NFO dB AT-41486 Typical Performance, TA = 25°C GA 18 15 13 12 GA 10 V 6V NF dB GAIN dB NF50

PDF Datasheet Preview

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Data Sheet

Avago’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount diameter plastic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier.

The AT-41486 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.
• Low Noise Figure dB Typical at GHz dB Typical at GHz
• High Associated Gain dB Typical at GHz dB Typical at GHz
• High Gain-Bandwidth Product GHz Typical fT
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free Option Available
86 Plastic Package

Pin Connections

EMITTER 4

BASE 1
2 EMITTER

COLLECTOR 3

AT-41486 Absolute Maximum Ratings

VEBO VCBO VCEO IC PT Tj

TSTG

Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature

Storage Temperature

Absolute

Units

Maximum[1]
-65 to 150
Ordering Information

Part Numbers AT-41486-BLK AT-41486-BLKG AT-41486-TR1 AT-41486-TR1G AT-41486-TR2 AT-41486-TR2G

No. of Devices 100 1000 4000

Comments Bulk 7" Reel 7" Reel
13" Reel 13" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

Thermal Resistance[2,4] = 165°C/W

Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at 6 mW/°C for TC > 68°C. See MEASUREMENTS section “Thermal Re-
sistance” for more information.

Electrical Specifications, TA = 25°C

Parameters and Test Conditions
|S21E| 2

Insertion Power Gain VCE = 8 V, IC = 25 mA

P1 dB

Power Output 1 dB Gain Compression

VCE = 8 V, IC = 25 mA

G1 dB
1 dB Compressed Gain VCE = 8 V, IC = 25 mA

Optimum Noise Figure VCE = 8 V, IC = 10 mA

Gain NFO VCE = 8 V, IC = 10 mA

Gain Bandwidth Product VCE = 8 V, IC = 25 mA

Forward Current Transfer Ratio VCE = 8 V, IC = 10 mA

ICBO

Collector Cutoff Current VCB = 8 V

IEBO

Emitter Cutoff Current VEB = 1 V

Collector Base Capacitance[1] VCB = 8 V, f = 1 MHz

Note For this test, the emitter is grounded.
f = GHz f = GHz f = GHz
f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz f = GHz

Units Min. Typ. Max.
30 150 270

GAIN dB

NFO dB

AT-41486 Typical Performance, TA = 25°C

GA 18 15
13 12 GA
10 V 6V

NF dB GAIN dB

NF50

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Datasheet ID: AT-41486-BLKG 520177