AT-41435G

AT-41435G Datasheet

Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Part	Datasheet
AT-41435G	AT-41435G (pdf)

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Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Agilent’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near at 1 GHz, makes this device easy to use as a low noise amplifier. 35 micro-X Package The AT-41435 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. • Low Noise Figure dB Typical at GHz dB Typical at GHz • High Associated Gain dB Typical at GHz dB Typical at GHz • High Gain-Bandwidth Product GHz Typical fT • Cost Effective Ceramic Microstrip Package • Lead-free Option Available AT-41435 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO VCBO VCEO IC PT Tj TSTG Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] 20 12 60 500 150 -65 to 150 Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at 5 mW/°C for TC > 100°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Thermal Resistance[2,5] = 200°C/W Electrical Specifications, TA = 25°C Parameters and Test Conditions \|S21E\|2 Insertion Power Gain VCE = 8 V, IC = 25 mA Units Min. Typ. Max. f = GHz dB f = GHz P1 dB Power Output 1 dB Gain Compression VCE = 8 V, IC = 25 mA f = GHz dBm f = GHz G1 dB 1 dB Compressed Gain VCE = 8 V, IC = 25 mA f = GHz dB Ordering Information Part Numbers No. of Devices AT-41435 AT-41435G Note Order part number with a “G” suffix if lead-free option is desired. 35 micro-X Package Dimensions 4 EMITTER DIA. BASE 1 ± ± COLLECTOR 2 EMITTER unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± ± ± For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460 China 10800 650 0017 Hong Kong 65 6756 2394 India, Australia, New Zealand 65 6755 1939 Japan +81 3 3335-8152 Domestic/International , or 0120-61-1280 Domestic Only Korea 65 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia 65 6755 2044 Taiwan 65 6755 1843 Data subject to change. Copyright 2005 Agilent Technologies, Inc. Obsoletes 5988-9279EN March 28, 2005 5989-2647EN

PDF Datasheet Preview

Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Data Sheet

Agilent’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near at 1 GHz, makes this device easy to use as a low noise amplifier.
35 micro-X Package

The AT-41435 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.
• Low Noise Figure dB Typical at GHz dB Typical at GHz
• High Associated Gain dB Typical at GHz dB Typical at GHz
• High Gain-Bandwidth Product GHz Typical fT
• Cost Effective Ceramic Microstrip Package
• Lead-free Option Available

AT-41435 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO VCBO VCEO

IC PT Tj TSTG

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]

Junction Temperature

Storage Temperature[4]
20 12 60 500 150 -65 to 150

Notes Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at 5 mW/°C for TC > 100°C. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.

The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.

Thermal Resistance[2,5] = 200°C/W

Electrical Specifications, TA = 25°C

Parameters and Test Conditions
|S21E|2 Insertion Power Gain VCE = 8 V, IC = 25 mA

Units Min. Typ. Max.
f = GHz dB
f = GHz

P1 dB

Power Output 1 dB Gain Compression VCE = 8 V, IC = 25 mA
f = GHz dBm
f = GHz

G1 dB 1 dB Compressed Gain VCE = 8 V, IC = 25 mA
f = GHz dB
Ordering Information

Part Numbers No. of Devices

AT-41435

AT-41435G

Note Order part number with a “G” suffix if lead-free option is desired.
35 micro-X Package Dimensions
4 EMITTER

DIA.

BASE 1
± ±

COLLECTOR
2 EMITTER
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±
± ±

For product information and a complete list of distributors, please go to our web site. For technical assistance call:

Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460

China 10800 650 0017

Hong Kong 65 6756 2394

India, Australia, New Zealand 65 6755 1939

Japan +81 3 3335-8152 Domestic/International , or 0120-61-1280 Domestic Only

Korea 65 6755 1989

Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia 65 6755 2044

Taiwan 65 6755 1843

Data subject to change. Copyright 2005 Agilent Technologies, Inc. Obsoletes 5988-9279EN March 28, 2005 5989-2647EN

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-41435G Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-41435G 520176