AMMC - 6430 25 - 33 GHz Power Amplifier
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AMMC-6430-W50 (pdf) |
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AMMC-6430-W10 |
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AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance ± 10µm mils Chip Thickness 100 ± 10µm 4 ± mils Pad Dimensions 100 x 100 µm 4 ± mils The AMMC-6430 MMIC is a broadband nearly 1W power amplifier designed for use in transmitters that operate in various frequency bands between 25GHz and 33GHz. This MMIC optimized for linear operation with an output third order intercept point OIP3 of 37dBm. At 30GHz it provides 29dBm of output power P-1dB and 17dB of gain. The device has input and output matching circuitry for use in 50 environments. The AMMC-6430 also integrates a temperature compensated RF power detection circuit that enables power detection of 0.3V/W. DC bias is simple and the device operates on widely available 5.5V for current supply negative voltage only needed for Vg . It is fabricated in a PHEMT process for exceptional power and gain performance. For improved reliability and moisture protection, the die is passivated at the active areas. • Wide frequency range 25 - 33 GHz • High gain 17 dB • Power GHz, P-1dB=29 dBm • Highly linear OIP3=37dBm • Integrated RF power detector • Volt, Volt, 900mA operation • Microwave Radio systems • Satellite VSAT and DBS systems • LMDS & Pt-Pt mmW Long Haul • & WiMax BWA • WLL and MMDS loops • Can be driven by AMMC-6345, increasingluding overall gain. AMMC-6430 Absolute Maximum Ratings[1] Parameters/Conditions Units Min. Positive Drain Voltage Gate Supply Voltage Drain Current CW Input Power Operating Channel Temp. Tstg Storage Case Temp. Tmax Maximum Assembly Temp 60 sec max Note Operation in excess of any one of these conditions may result in permanent damage to this device. Max. 7 1500 23 +150 +150 +300 Note These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices AMMC-6430 DC Specifications/Physical Properties [1] Parameters and Test Conditions Units Min. Typ. Max. Drain Supply Current under any RF power drive and temperature Vd=5.0 V, Vg set for Id Typical 1000 Gate Supply Operating Voltage Id Q = 900 mA qch-b Thermal Resistance[2] °C/W Backside temperature, Tb = 25°C Ambient operational temperature TA=25°C unless otherwise noted. Channel-to-backside Thermal Resistance = 10°C/W at Tchannel Tc = 107°C as measured using infrared microscopy. Thermal Resistance at backside temperature Tb = 25°C calculated from measured data. Ordering information AMMC-6430-W10 = 10 devices per tray AMMC-6430-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0221EN AV02-0883EN - June 23, 2008 |
More datasheets: AT27LV010A-90TC | AT27LV010A-90JI | AT27LV010A-90VC | AT27LV010A-70TC | AT27LV010A-12JC | AT27LV010A-90JC | 795-305420 | 1953 | HFX44S10 | AMMC-6430-W10 |
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